Finite Element Simulation of the Local AlSi Contact Formation.pdfVIP

Finite Element Simulation of the Local AlSi Contact Formation.pdf

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Finite Element Simulation of the Local AlSi Contact Formation.pdf

Available online at ScienceDirect Energy Procedia 92 (2016) 75 – 81 6th International Conference on Silicon Photovoltaics, SiliconPV 2016 Finite element simulation of the local Al/Si contact formation Axel Herguth University of Konstanz, Department of Physics, 78457 Konstanz, Germany Abstract The formation of local Al/Si contacts, as found in PERC type cells, was evaluated by finite element simulation based on a model of Si diffusion in the molten Al layer as well as dissolution and recrystallization of Si at the liquid/solid interface. In accordance with experimental observations the simulations reproduce the characteristic lateral spread of Si in the Al layer, the different cavity shapes (ranging from round to ?-shaped cavities) as well as the development of the Al-doped recrystallized region which forms the high-low junction to the lower doped substrate responsible for the back surface field passivation. ??ThheeAAutuhtohros.rsP.uPbulibshliesdhbeyd EblyseEvliseervLitedr. LThtdis. is an open access article under the CC BY-NC-ND license (Phettepr:/r/ecvreiaetwivebcyomthme osncsie.onrtgi/fliiccecnosnefse/brye-nncce-ncdo/m4.0m/)i.ttee of SiliconPV 2016 under responsibility of PSE AG. Peer review by the scientific conference committee of SiliconPV 2016 under responsibility of PSE AG. Keywords: Al/Si contact formation; local contacts; PERC 1. Introduction Nowadays, most industrially manufactured silicon solar cells still feature a virtually one-dimensional layered structure consisting of full area n+-emitter on top of a p-type substrate and a full area back contact realized by alloying screen-printed Al with Si from the substrate. Within this alloying process, a strongly Al-doped (sometimes also B-codoped) region evolves forming a high-low junction. The resulting electrical back surface field (BSF) repels electrons thus reduces the electron concentration at the physical Si/metal interface and in consequence lowers recombination activity there. Even though thi

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