Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaNGaN heterostructure field-effect transistors.pdfVIP

下载本文档

2
0
约1.91万字
约 8页
2017-03-16 发布于天津
举报
版权申诉

Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaNGaN heterostructure field-effect transistors.pdf

1、有哪些信誉好的足球投注网站（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。。
2、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
4、该文档为VIP文档，如果想要下载，成为VIP会员后，下载免费。
5、成为VIP后，下载本文档将扣除1次下载权益。下载后，不支持退款、换文档。如有疑问请联系我们。
6、成为VIP后，您将拥有八大权益，权益包括：VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
7、VIP文档为合作方或网友上传，每下载1次，网站将根据用户上传文档的质量评分、类型等，对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档

Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaNGaN heterostructure field-effect transistors.pdf

Superlattices and Microstructures 103 (2017) 113e120 Contents lists available at ScienceDirect Superlattices and Microstructures journal homepage: /locate/superlattices Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure ?eld-effect transistors Huan Liu a, Aijie Cheng a, *, Zhaojun Lin b, Peng Cui b, Yan Liu b, Chen Fu b, Yuanjie Lv c, Zhihong Feng c, Chongbiao Luan d a School of Mathematics, Shandong University, Jinan, 250100, China b School of Microelectronics, Shandong University, Jinan, 250100, China c National Key Laboratory of Application Speci?c Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China d Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, Mianyang, 621999, China article info Article history: Received 9 January 2017 Accepted 18 January 2017 Available online 20 January 2017 Keywords: AlGaN/GaN HFETs Diffused Ohmic contact metal atoms Polarization Coulomb ?eld scattering abstract Using measured capacitance-voltage and current-voltage curves for the AlGaN/GaN heterostructure ?eld-effect transistors with different source-drain spacing, the electron mobility under the gate region was obtained. By comparing mobility variation and analyzing polarization charge distribution, it is found that with device scaling, the effect of the diffused Ohmic contact metal atoms on the electron mobility is enhanced. Then, a theoretical calculation related to different scattering mechanisms was adopted and it was veri?ed this enhanced effect is due to the enhanced polarization Coulomb ?eld (PCF) scattering. ? 2017 Elsevier Ltd. All rights reserved. 1. Introduction Ohmic contacts are critical to the realization of high-frequency application in AlGaN/GaN heterostructure ?eld effect transistors (HFETs) [1,2]. The normal Ohmic contact processes include multilayer metal deposition and rapidly thermal annealing. During thermal annealing, huge Ohmic contact metal atoms inevi