asich薄膜的制备及其光伏器件应用word格式论文.docxVIP

摘要摘要窗口层在p-i-n型太阳电池中起着一个重要的作用。本论文采用等离子体增强化学气相沉积系统CPECVD)，首先在玻璃衬底上制备了光学带隙为2.46eV的氢化非晶碳化硅Ca-SiC:H)薄膜，并利用台阶仪、X 射线光电子谱(XPS) 、紫外可见光谱CUV-VTS)等技术于段实验研究了射频功率、衬底温度、反应压强和气体流量对薄膜的生长速率、结构成分和光学带隙的影响。实验发现，光学带隙随着上述条件而变化。以B2H6为掺杂剂，利用原位掺杂制备了电导率为4.3XIO-7S/cm的p-(a-SiC:H)薄膜。测试结果表明，随着B2H6流量和衬底温度的增加，薄膜的生长速率提高。薄膜的电导率随着工艺条件而变化。以p-(a-SiC:H)薄膜为窗口层制备了p-(a-SiC:H)/i-(nc-Si:H)/n-(nc-Si:H)太阳电池。随着p层厚度的增加，短路电流密度Jsc、填充因子FF、转换效率q都减小，而开路电压Voc变化不明显。关键词: PECVDa-SiC:Hp-(a-SiC:H)p-(a-SiC:H)/i-(nc-Si:H)/n-(nc-Si:H)太阳电池AbstractAbstractThe windowlayerplaysa importantrole inthe p-i-ntype solarcells.Thea-SiC:Hfilmwiththeopticalbandgapenergyof2.46eVwasdepositedonglasslayersbyplasmaenhancedchemicalvapordeposition(PECVD).Tnthispaper，theeffectofRFpower，substratetemperature，reactionpressureandgasflowrateongrowthrate，structuralcomponentandopticalbandgapoffilmwasstudiedbyusingstepdevice，X-rayphotoelectronspectra(XPS)，ultraviolet-visiblespectroscopy(UV-VTS)andothertechnicalmeans.Ttwasfoundthattheopticalbandgapasaboveconditionschanges.UsingB2H6asdopant，thep-(a-SiC:H)filmwiththeconductivityof4.3XIO-7S/cmwasdeposited.ThetestresultsshowedthatwiththeincreaseofB2H6flowandsubstratetemperature，filmgrowthratewasincreased.Theconductivityoffilmwiththe process conditions changed. Thep-(a-SiC:H)/i-(nc-Si:H)/n-(nc-Si:H)solarcellcoveredwiththep-(a-SiC:H)windowlayerwasprepared.Asthethicknessofp-layerwasincreasing，short-circuitcurrentdensityJsc，fillfactorFFandconversionefficiencyηwerereduced，whiletheopen-circuitvoltage(Voc)didnotchangesignificantly.Keywords PECVD a-SiC:H p-(a-SiC:H) p-(a-SiC:H)/i-(nc-Si:H)/n-(nc-Si:H)solarcell目录目录第I章绪论..........................................................................................................................II.I 研究背景及意义..............................................................................................................II.2国内外研究现状..............................................................................................................I3.2 射频功率......................