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Impact of nitrogen plasma passivation on the Aln-Ge contact.pdf
Materials Science and Engineering B 211 (2016) 178–184
Contents lists available at ScienceDirect
Materials Science and Engineering B
journal homepage: /locate/mseb
Impact of nitrogen plasma passivation on the Al/n-Ge contact
Shumei Lai a, Danfeng Mao a, Yujiao Ruan b, Yihong Xu a, Zhiwei Huang a, Wei Huang a, Songyan Chen a,?, Cheng Li a, Jianyuan Wang a, Dingliang Tang c
a Department of Physics, Xiamen University, Xiamen, Fujian 361005, China b Xiamen Institute of Measurement and Testing, Xiamen, Fujian 361004, China c College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005, China
article info
Article history: Received 4 March 2016 Received in revised form 15 June 2016 Accepted 7 July 2016 Available online 12 July 2016
Keywords: Al/n-Ge contact Germanium oxynitride Schottky barrier height
abstract
Severe Fermi level pinning at the interface of metal/n-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeOxNy) passivation layer. It was found that the Schottky barrier height (SBH) of metal/n-Ge contact was strongly modulated by the GeOxNy interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N2 plasma treatment and additional post anneal, a Quasi-ohmic Al/n-Ge contact was achieved. Furthermore, the introduced GeOxNy layer gave extremely lower leakage current density of the gate stack for HfO2/Ge devices. These results demonstrate that GeOxNy formed by N2 plasma would be greatly bene?cial to the fabrication of the Ge-based devices.
ó 2016 Elsevier B.V. All rights reserved.
1. Introduction
Germanium has received great interest as one of the possible candidates for next-generation high-performance metal-oxidesemiconductor ?eld effect transistors (MOSFETs), due to the much higher electron and hole
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