inasgainsb超晶格的外延生长模拟及微结构设计研究-epitaxial growth simulation and microstructure design of inasgainsb superlattice.docx

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2018-05-29 发布于上海
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inasgainsb超晶格的外延生长模拟及微结构设计研究-epitaxial growth simulation and microstructure design of inasgainsb superlattice.docx

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inasgainsb超晶格的外延生长模拟及微结构设计研究-epitaxial growth simulation and microstructure design of inasgainsb superlattice

AbstractTheKineticMonteCarlo(KMC)methodbasedonSolid-on-Solid(SOS)modelhasbeenusedtosimulatethegrowthofInAs/Ga1-xInxSbsuperlattice(SL)grownbyMolecularBeamEpitaxy(MBE).ThebandstructureofInAs/Ga1-xInxSbsuperlatticehasbeencalculatedbytheEnvelopeFunctionmethod.Onthebasisofsimulationandcalculation,aSLphotovoltaicdeVicewasdesigned.Thesimulationshowsthat,whenthesubstratetemperatureis663K,theRoughness-TimecurveofInAs/Ga1-xInxSbgrowthonGaSbbufferdisplaysaperiodicaloscillation,whichagreeswiththereportedRHEED’spatterns.ItindicatesthehighqualitySLsgrowthbyMBEatthistemperature.TheInSb-likeinterfaceintheInAs/Ga1-xInxSbSLissmootherthantheGaAs-likeversion.Furthermore,thequalityoffilmdegradesastheIncontentincreasingintheGa1-xInxSbgrowth.Ingeneral,theSLperiodandIncontentcontributethebandstructurechangeofInAs/Ga1-xInxSbSL.Thecaulationresultexhibitsthat,theenergyofSLHH1subbandrisesandC1declineswhenInAslayerthicknessincreases,sobandgapEgdecreases;ontheotherhand,increasingthethicknessofGaInSblayerresultsinbothC1andHH1risethenEghaslittlechanges.BecausetheIncontentaffectsonbothstrainandmostbandstructureparametersofGaInSb,theSLbandstructurewillvarysignificantlyduetothechangingcontent.Besides,theenergyofC1subbanddeclinesandHH1riseswithIncontentincreasing,whichresultsinthequickdecreaseofbandgap.Ap-i-nphotodiodebasedonInAs/Ga0.9In0.1Sb(3nm/2.7nm)superlatticehasbeendesigned.Theactivelayerconsistsof20periodsunintentionaldopedSLssandwichedbetween40periodsp-typeSLs(GaInSb:Be1×1017cm-3)and40periodsn-typeSLs(InAs:Si5×1017cm-3).Thedarkcurrentat77Kmainlymakeupofthegeneration-recombination(G-R)currentandband-to-bandtunnelingcurrent.TheG-RcurrentdominatesthedarkcurrentwhenthereVersebiaslowerthan16.5mV,whilebeyond16.5mVtheband-to-bandtunnelingcurrentexceeds.KeywordsInAs/Ga1-xInxSb;KMC;SOS;bandstructure;????.......................................................................................................................IAbstract..........................................................................