bct铁电薄膜和纳米纤维晶体管的制备及性能分析word格式论文.docxVIP

优秀毕业论文 精品参考文献资料 ABSTRACT Non-volatile memories based on ferroelectric-gate field effect transistors (FeFETs) is currently regarded as candidates of the most potential next generation memories with clear advantages such as non- volatility, low power consumption, high speed writing, high density and irradiation hardening. So the ferroelectric thin film field effect transistors (FeFETs) are investigated in this Masters thesis. The advances of lead-free ferroelectric materials and ferroelectric memory are reviewed in the introduction. The review focuses on: (1) The fabrication and characteristics of the Bi4-xCexTi3O12 ferroelectric thin films, (2) Bi3.4Ce0.6Ti3O12 nanofibers were synthesized using the sol- gel based electrospinning, (3) The fabrication and characteristics of Pt/BCT/CeO2/Si structure Bi3.4Ce0.6Ti3O12 thin film FeFET and back gate structure all the perovskite BCT nanofiber/ferroelectric thin film FeFET. Specific work and results are summarized as follows: The Bi4-xCexTi3O12 (x = 0.0, 0.4, 0.6, and 1.0) thin films were fabricated on the Pt/Ti/SiO2/Si substrates by Sol-Gel method. We have investigated the effect of Ce content on the phase transition, remnant polarization, leakage current density and fatigue characteristics. We found that Ce doping does improve the ferroelectric properties of BIT, when x = 0.6, the thin film has the best ferroelectric properties such as: the largest remnant polarization 2Pr (65 μC/cm2 at 333 kV/cm and 10 kHz), the minimum leakage current (2.8×10-8 A/cm2 at 10 V) and the best fatigue properties. Cerium-substituted bismuth titanate (BCT) nanofibers were synthesized using the sol-gel based electrospinning. The morphology, crystallized phase, crystal structure and piezoelectric properties of the nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM), respectively. The fine crystallinity nanofibers with the