大功率半导体开关RSD触发导通特性的实验研究.pdfVIP

2012 年 10 月 电 工 技 术 学 报 Vol.27 No. 10 第 27 卷第 10 期 TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY Oct. 2012 大功率半导体开关RSD 触发导通特性的 实验研究 周竞之 王海洋 何小平 陈维青 郭 帆 邱爱慈 （西北核技术研究所 西安 710024 ） 摘要 大功率半导体开关 RSD 是目前通流能力最强的半导体开关之一，它具有电流上升率 高、导通损耗小的特点。触发参数是影响RSD 导通状况的主要因素之一；本文通过实验研究了不 同触发电流脉宽、幅值对RSD 导通状况的影响，得出了2μs 、1μs 、500ns 和250ns 四种触发脉宽 下RSD 峰值导通压降随触发电荷量的变化曲线，分析了250ns 触发脉宽下 RSD 导通不充分的原 因，实验结果表明临界触发电荷量计算公式中比例系数随触发脉宽增加而增大。 关键词：反向导通双极晶闸管 触发导通特性 磁开关 触发电荷量 峰值导通压降 中图分类号：TN34; TN78 Experimental Investigation on Triggering and Conducting Characteristic of High Power Semiconductor Switch RSD Zhou Jingzhi Wang Haiyang He Xiaoping Chen Weiqing Guo Fan Qiu Aici （Northwest Institute of Nuclear Technology Xi’an 710024 China ） Abstract High power semiconductor switch reversly switched-on dynistor(RSD) is one of the semiconductor devices with the largest conductive current capability, and features high di/dt and low power dissipation. Trigger parameters are main factors which have considerable impact on conducting state of RSD. Influence of different amplitudes and pulse widths of trigger current on conducting state is investigated by experiments. Curves of peak switching voltage of RSD as a function of trigger charge with four different pulse widths of trigger current, 2μs, 1μs, 500ns and 250ns are obtained, and cause of ununiform switching under 250ns pulse width is discussed. It’s shown that proportion factor in critical trigger charge equation increases with trigger pulse width increment. Keywords ：Reversly switched-on dynistor, triggering and conducting characteristic, magnetic switch , trigger charge, peak switching voltage 1 引言