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delocalization of electrons in strong insulators at high dynamic pressures离域电子在高动态压力强大的绝缘体.pdf

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delocalization of electrons in strong insulators at high dynamic pressures离域电子在高动态压力强大的绝缘体

Materials 2011, 4, 1168-1181; doi:10.3390/ma4061168 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Review Delocalization of Electrons in Strong Insulators at High Dynamic Pressures William J. Nellis Department of Physics, Harvard University, Cambridge, MA 02138, USA; E-Mail: nellis@; Tel.: +1-510-847-6821; Fax: +1-617-496-5144 Received: 28 May 2011 / Accepted: 13 June 2011 / Published: 21 June 2011 Abstract: Systematics of material responses to shock flows at high dynamic pressures are discussed. Dissipation in shock flows drives structural and electronic transitions or crossovers, such as used to synthesize metallic liquid hydrogen and most probably Al O 2 3 metallic glass. The term ―metal‖ here means electrical conduction in a degenerate system, which occurs by band overlap in degenerate condensed matter, rather than by thermal ionization in a non-degenerate plasma. Since H and probably disordered Al O become 2 2 3 poor metals with minimum metallic conductivity (MMC) virtually all insulators with intermediate strengths do so as well under dynamic compression. That is, the magnitude of strength determines the split between thermal energy and disorder, which determines material res