Lowpressure CVD and Plasma Enhanced CVD（Lowpressure CVD和等离子体增强化学汽相淀积）.pdfVIP

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Lowpressure CVD and Plasma Enhanced CVD（Lowpressure CVD和等离子体增强化学汽相淀积）.pdf

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Lowpressure CVD and Plasma Enhanced CVD（Lowpressure CVD和等离子体增强化学汽相淀积）

Low-pressure CVD and Plasma- Enhanced CVD Ronald Curley, Thomas McCormack, and Matthew Phipps Introduction: Chemical vapor deposition (CVD) is a key process in semiconductor fabrication that deposits thin films on semiconductors. In this report we describe Low-Pressure CVD and Plasma-Enhanced CVD (PECVD). We also compare their characteristic strengths and weaknesses and the applications in which they perform best. Low-Pressure Chemical Vapor Deposition: LPCVD LPCVD is a process used in the manufacturing of the deposition of thin films on semiconductors usually ranging from a few nanometers to many micrometers. LPCVD is used to deposit a wide range of possible film compositions with good conformal step coverage. These films include a variety of materials including polysilicon for gate contacts, thick oxides used for isolation, doped oxides for global planarization, nitrides and other dielectrics. LPCVD is similar to other types of CVD in that it is a process where a gaseous species reacts on a solid surface or wafer and the reaction that occurs produces a solid phase material. Each and every CVD process has the same four steps that must happen. First, the reacting gaseous species must be transported to the surface. Second, the gaseous species must absorb into the surface of the wafer. Third, the heterogeneous surface reaction produces reaction products.[1] Finally the gaseous reactants need to be removed from the surface. The low pressure distinguishes LPCVD from other CVD processes: atmospheric pressure CVD, of course, is CVD performed without pressurization or depressurization. The main reason for using LPCVD instead of APCVD is the ratio of the mass transport velocity and the velocity of reaction on the surface. During APCVD the ratio is close to one as the two velocities are of the same order of magnitude. The velocity of the mass transport depends mainly on the reactant concentration, diffusion, and thickness of the border layer. When t