温度对hemt器件的影响研究.docxVIP

摘要GaN半导体材料具有禁带宽度大、电子饱和速度高、导热性能好等优点，在高温、大功率、微波器件领域拥有很大的发展潜力。其中，AlGaN/GaN HEMT作为GaN基微电子器件代表，可广泛利用与航天等领域。由于器件长时间工作在高偏压和高空间辐射的环境下，器件的可靠性是一件值得科学家们关注的问题，本论文主要是探讨新型的AlGaN/GaN HEMT器件。首先，介绍AlGaN/GaN HEMT器件的研究现状以及发展潜力。其次，介绍了AlGaN/GaN HEMT器件的性能参数、工作原理，介绍了仿真软件TCAD silvaco的物理模型。最后，使用silvaco仿真软件自定义一个AlGaN/GaN HEMT器件，再对其进行栅电流与温度特性的仿真、势垒层厚度与栅电流特性的仿真、漏电流与温度的特性仿真、漏电流与势垒层厚度的特性仿真，仿真结束之后，又通过Origin数据处理软件进行数据处理，得出特性曲线，并通过分析特性曲线得出器件的特性，最后我们展望如何得性能更好的AlGaN/GaN器件结构。关键字：AlGaN/GaN HEMT silvaco 温度栅泄漏电流AbstractGaNsemiconductor material havinga largeband gap, highelectronsaturation velocity, good thermal conductivity, etc., havegreat potentialinhigh-temperature, high-power microwavedevices in the field. And, AlGaN / GaN HEMT GaN-basedmicroelectronic devicesasrepresentatives ofother widelyavailableandaerospaceuse. Because the deviceto work long hoursunder highbiasand highspace radiationenvironment, thenthe device reliabilityis aproblem worthy ofconcern toscientists, the main thesisis to explorethenewAlGaN / GaN HEMT.Firstly,research statusAlGaN / GaN HEMTdevicesand development potential.Secondly, theintroductionof theAlGaN / GaNHEMTdeviceperformance parameters, working principle, introducedsimulation softwareTCAD silvacophysical model.Finally, the use of a customsimulation softwaresilvacoAlGaN / GaN HEMTdevices,then itsgate currentandtemperature characteristics ofthe simulation, the simulation of the barrierlayer thicknessandgate currentcharacteristics of theleakage currentversus temperaturecharacteristic simulation, leakage currentandpotentialcharacteristics ofthe barrierlayer thicknesssimulation,after the end ofthe simulation, data processinganddata processing softwarebyOrigin, derivedcharacteristic curvescharacteristic curvesderivedby analyzingthe characteristicsof the device,and finally wehavea betteroutlookon howthe performanceofAlGaN / GaNdevicesstructure.Key words: AlGaN/GaN HEMT SilVaco Temperature Gate leakage目录第一章绪论11.1 AlGaN/GaN HEMT的研究背景11.1.1 GaN用于微波功率器件的优势11.1.2 AlGaN/GaN HEMT 的研