Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells.pdfVIP

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells.pdf

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Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells.pdf

Solar Energy Materials Solar Cells 158 (2016) 68–76 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells David L. Young n, William Nemeth, Vincenzo LaSalvia, Matthew R. Page, San Theingi, Jeffery Aguiar, Benjamin G. Lee, Paul Stradins National Renewable Energy Laboratory, 15013 Denver West Parkway, M.S. 3219, Golden, CO 80401, USA article info Article history: Received 21 March 2016 Received in revised form 29 April 2016 Accepted 19 May 2016 Available online 1 June 2016 Keywords: Plasma immersion ion implantation Passivated contacts Silicon Solar cells abstract We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14–1E18 cmà2) at low ion energies (20 eV–10 keV). These bene?ts make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20–200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures ( $ 100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660–680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information. Published by Elsevier B.V. 1. Introduction The U.S. Department of Energys SunShot goals for photovoltaics (PV) are

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