玻璃蚀刻工艺概述.pdfVIP

Etching Process 1 Contents Etching IntroductionEtching Introduction Dry Etching Process Wet Etching Process Cleaning Process Introduction Summary 2 Etching Introduction 4 曝光、顯影 1 基板表面平坦化 薄膜區 5 蝕刻（Dry or Wet ） 2 鍍膜 黃光區 3 上光阻 6 去光阻（Wet ） 蝕刻區 3 Etch Profile 4 Dry Etch vs. Wet Etch Comparison of Equipment Comparison of Dry Etch Wet etch Equipment Initial Cost High Low Foot Print Small Large Running Cost Low High Throughput Low High Up-Time High High 5 Dry Etch vs. Wet Etch Comparison of Process Comparison of Process Dry Etch Wet etch Etch Rate Low High Uniformity Good Poor Repeatability Good Poor CD Loss Small Large Selectivity to Under Layer Poor Good Profile Control Good Very Poor Multi Layer Etch Possible Difficult 6 Etching Mechanism （1 ） 7 Etching Mechanism （2 ） 8 Contents Etching Introduction Dry Etching Process Dry Etching Process Wet Etching Process Cleaning Process Introduction Summary 9 Dry Etch – What is Plasma Plasma - ? ◆ A plasma is a “quasi-neutral” gas of charged and neutral particles which exhibits “collective behavior”. - ◆指一個遭受部分離子化的氣體；氣體的組成，有各種帶 電荷的電子、離子 Ion ，及不帶電的分子和原子團 Radicals 等，其總帶電量為零。 10 Dry Etch – What is Plasma etch ? ◆產生Plasma 三要素: RF Power / Electrode Space / Low Pressure 11 Nonmetallic Etching F ilm E tchant S electivity α-S i SF /O 6 2 C F /O 4 2 C l /O 50:1 2 2 H B r/O 2 100:1 SiN x SF /O 6 2 good C F /O 4 2 N F 3/O 2 C H F /C H F /O 3 2 2 2 T E O S SiO x C F /O 4 2 C H F /O 3 2 C 4 F 8 12 Metallic Etching F ilm E tc h a n t A l T i B C l3 /C l2 B C l3 e n h a n c e th e e tc h a b ility o f m e ta l o x id e in in itia te e tc h in g C r C l2 /O 2 R e s id u a l C l2 e x p o s u re in a tm o s p h e ric h u m id ity to fo rm H C l, w h ic h c o rro d e th e m e ta l. M o W M o S F 6 /C F 4 /O 2 C l2 /O 2 IT O C H 4 /H 2 C l2 H I H B r 13 SiOx mechanism 14 What are the concerns for Dry etching ？ Uniformity Etching rate Taper profile co