Metal epitaxy depending on the growth temperature during deposition》.pdfVIP

Applied Surface Science 219 (2003) 102–106 Metal epitaxy depending on the growth temperature during deposition$ a a,* a b K. Umezawa , T. Ito , S. Nakanishi , W.M. Gibson aDepartment of Materials Sciences, Osaka Prefecture University, 1-1 Gakuen-Cho, Sakai, Osaka 599-8531, Japan bDepartment of Physics, University at Albany, SUNY, 1400 Washington Avenue, Albany, NY 12222, USA Received 20 August 2002; accepted 26 January 2003 Abstract Time of flight impact-collision ion scattering (TOF-ICISS) has been used to investigate the heteroepitaxial growth of 3 ML of Au or Ag on Ni(1 1 1), and Ag on Cu(1 1 1) over a wide temperature range from 170 through 680 K. We found that two different types of epitaxial growth exist: M(1 1 1)[1 1 2]/Sub(1 1 1)[1 1 2] (normal mode) and M(1 1 1)[1 1 2]//Sub(1 1 1))[1 1 2] (reverse mode) (M represents Au or Ag, and Sub represents Ni or Cu, respectively). Moreover the relative amounts of these two growth modes show an observed oscillatory dependence on the growth temperature during metal deposition. It is our belief that this is previously unobserved phenomena. It is sufficiently general to encompass metal-on-metal systems. # 2003 Elsevier B.V. All rights reserved. PACS: 68.35.Bs; 81.15 Keywords: Epitaxial growth; Low energy ion beam scattering (LEIS); Gold; Nickel; Silver; Copper; Surface alloy 1. Introduction to accurately predict growth processes for any given system. This study has been motivated by the growing Studies of the initial stage of metal thin-film de