第四章2驱动原理.pptVIP

主动矩阵式液晶显示器AM-LCD Panel Structure Pixel Structure of TFT LCDs Formation of n+-doped layer ( ohmic contact ) Figure 8. Layout of top and bottom gate TFTs TFT的结构 Figure 2. Model of a FET. VG Vth ; VD is small TFT原理 Figure 3. Model of a FET. VG Vth, VD is small Figure 4. Model of a FET. VG Vth, VD is large, but smaller than (VG - Vth) Figure 5. Model of a FET. VG Vth, VD VG - Vth L :通道长 W:通道宽 a－Si TFT 的I-V 特性 TFT Structure 1. Gate line 2. Gate tone 3. I/S 4. Source 5. Drain 6. Self leak repair kit 7. Tendon repair kit (face out) 8. Display area 9. CS (MIM) 10. Cross over 11. Signal line 12. Through hole 13. Shield metal 1 2 3 4 5 6 7 8 9 10 12 12 12 13 Subpixel 解析图 Layouts of pixels with a-Si TFT switches Electron mobility : a-Si ~ 1cm2 / Vs P-Si ~ 20 – 400 cm2 / Vs 补偿电容成因 Clc Cs Clc Cs Common Common (N-1)th Scan Line (N-1)th Scan Line Nth Scan Line Nth Scan Line Cs on Common Mode Cs on Gate Mode Cgd Cgd 液晶電容 儲存電容 掃描電極 資料電極 共通電極 Mth Data Line Mth Data Line 資料電極 掃描電極 :Clc :Cs :Common :Cgd 寄生電容 液晶畫素電容:Clc+Cs Cs on Common 液晶畫素 TFT Gate Line Data Line Cs Cs 液晶畫素 TFT Common Common Gate Line Data Line Cs Cs Cs on Common Cs on Gate 补偿电容的比较 常见缺陷 线路缺陷与显示－1 线路缺陷与显示－2 暗点的第一次修复 修复方法－1 修复方法－2 暗点的第二次修复 修复方法－3 暗点的第一次修复 修复方法－4 暗点的第二次修复 可修图片 M2 Residue M2 Residue 不可修图片 a-Si TFT Configuration Structure configuration layer Gate electrode (metal) Isolated film a-SiNx:H Channel layer a-Si:H (undoped) Ohmic contact n+ a-Si:H Source drain electrode (metal) Cleaning Insulator a-Si GATE Electrode TFT Manufacturing Process SUBSTRATE Al DC Al Al Al Al Ar+ Al Ar+ TARGET SPUTTER R F H Si Si N Si N H Si H H H N N H H H H H PECVD Deposition PR Coating Exposure Glass DATA Electrode Develop PR Strip Inspection Wet Etch Dry Etch FO Si SiF4 Si PLASMA Gas RF Etch Deposition Patterning Process in Detail Passivation Pixel Electrode Pattern- ing Pattern- ing Pattern- ing Pattern- ing Pattern- ing * 透光率在很宽的频率范围内只与驱动电压的均方根值相关，而