bst和pzt薄膜的制备及性能分析word格式论文.docxVIP

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bst和pzt薄膜的制备及性能分析word格式论文.docx

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bst和pzt薄膜的制备及性能分析word格式论文

AbstractBecauseofpiezoelectric,ferroelectric,pyroelectricandotherphysicalcharacteristics, perovskitestructurematerialsarewidelyusedinvariousfields.Itcanprovideguidancefor practicalapplicationandhassomescientificsignificancebyconductingresearchrelatedto preparingperovskitestructurematerialbycontrollingthemicro-nanostructures,and exploringtheirdifferentmicro-nano structures onthe properties.Thispaperintroducesthecharacteristicsofthecrystalstructureoftheperovskite structure and related properties of the materials,and summarize the characteristics of(Ba,Sr)TiO3(BST)、Pb(Zr,Ti)O3(PZT). Besides we also compare various methods ofpreparing perovskitestructurematerials.Onthisbasis,wepreparedBSTandPZTthinfilms bySol-gelsuccessfullywhichareperovskitestructure.WeuseX-rayDiffraction(XRD), AtomicForceMicroscope(AFM),Agilent4294Aprecisionimpedanceanalyzerandother meansto systematically explore thephasesandmicrostructureofthesematerials,revealing itsformationmechanism.Weobtainaprocessforthepreparationofthesematerialsand studyits relatedproperties. Contents of this paper areasfollows:Wepreparedpurephase(Ba0.6Sr0.4)TiO3(BST)thinfilmssuccessfullythroughSol-gel andtheoptimizationofexperimentalconditions.Co-dopeddifferentamountsKandNdin theAbitofBSTthinfilms.StudieshaveshownthattheintroductionofK+andNd3+can reducethedielectricconstant,ferroelectricityandtenability,andimprovedielectriclossof the thin films. Furthermore, theFOM of dopedBSTthin films is much higher than pureone. indicatingthattheintroductionofKandNdintoBSTcanimprovethepropertiesofthe films.Onthebasicsofpreviousworks,preparexNZCT-BSTthinfilmswithdifferent amount ofNd(Zn0.925Co0.075)0.5Ti0.5O3bySol-gel.Explorethe effects ofdifferentamount of NZCTonmicrostructure,surfacemorphology,dielectrictunableproperties,andanalysis its related mechanismsimply.Prepare(Pb1-xBax)(Zr0.52Ti0.48)O3(PBZT)thinfilmswithdifferentamountofBaby Sol-gel.Studyitsphase,microstructureanditsrelatedelectricalpropertiesbyXRD,AFM and4294A.WiththeincreaseofBad