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algangan超晶格红外紫外双色光电探测器分析word格式论文
ABSTRACTTheforbiddengapoftheAlxGa1-xNmaterialcanbeadjustedcontinuouslyfromeV(forGaN)to6.2eV(forAlN).Itisagoodalternativeforopticaldetectionin theUltravioletSolarBlindArea(200-280nm).Theconductionbanddiscontinuityof theAlNandGaNcanreach2eVwhichendowsthissystemahugecompetitive advantageintheinfraredphotodetection.Theproblemistheintensityoftheultraviolet lightdecreasesquicklyinthenear-surfaceatmosphere,andtheeffectivedetection rangeisnotlongerthan500 m,whiletheinfraredlight whichcanbeusedtorealizethe remoteprobinghasaconsiderablebackgroundradiation.Ifwecanusetheinfrared detectiontorealizetheremoteprobingandswitchtotheultravioletmodewhenthe distancefromthetargetisnotlongerthan500m,theefficiencyofthetargettracking andidentificationcanbeenhancedandtheinfluenceofthebackgroundradiationcan beweakened.Furthermore,ifthedetectionofthetwodifferentwavelengthscanbe realizedwithasingledeviceandjustonecoolingsystem,thecostandthevolumeof thedetectorwillbedecreasedandtheapplicationareaswillbeexpanded.Thepurpose ofthissubjectisexactlywhatwehavediscussedabove,thedetectionoftheultraviolet lightisachievedbytheinterbandtransitionoftheAlGaN/GaNsuperlatticewhilethe detectionoftheinfraredlightisrealizedbyintersubbandtransitionofthesuperlattice. Wefocusourattentionontheinfrareddetection,becausetheselectiveabsorptionof thesuperlatticestructuretotheinfraredlightmustconsiderallkindsofparametersof thesuperlattice,andthisprocessismorecomplicatedwhenthepolarizationeffectis taken into account.ThisdissertationreferstotheentireprocessofthedesignoftheAlGaN/GaN superlatticephotodetection,includingthesimulationofthesuperlatticestructure,the epitaxialgrowthofthesuperlatticewithMOCVD,themeasurementoftheopticaland electric characteristics ofthe superlattice.The major achievements are listed below:WiththeuseofthesoftwareSILVACOandNEXTNANO3,thestructuresoftheAlGaN/GaNaredefined,andtheinfluenceofeachparameteronthepositionofthe subbandisanalyzed.Theanalyzedstructureparametersincludethedopinginthewells, thethickn
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