algangan微波功率器件建模与功率合成研究word格式论文.docxVIP

摘要摘要近年来，随着人们对电子器件的高温、高频、大功率、抗辐射等性能的要求 不 断 提 高 ， GaN 材料 作 为 第 三 代 半 导 体 材料 的 代 表 ， 得 到 了 迅 速 的 发 展 。 AlGaN/GaN HEMT 器件在高温、高频、大功率、抗辐射等应用领域有着广阔的前 景和巨大的潜力。准确的器件模型的建立，对于微波和射频电路的设计是至关重 要的。本论文围绕 AlGaN/GaN HEMT 器件模型开展研究，建立了 AlGaN/GaN HEMT 器件的等效电路模型并进行参数提取，并对微波功率合成进行分析，设计 了基于 AlGaN/GaN HEMT 的微波功率合成电路。首先，介绍了 AlGaN/GaN HEMT 的器件结构和工作原理，并对几种小信号模 型进行了分析。从小信号线性分析入手，对 AlGaN/GaN HEMT 小信号等效模型进 行详细讨论，建立了合适的小信号等效模型，对模型参数的提取进行研究。接着，基于大信号工作状态，介绍了几种大信号直流 I-V 特性模型，以 Angelov模型为基础进行了大信号模型研究。 最后，对微波功率合成放大器分类介绍，设计了中心频率为 5.0GHz 的微带型Wilkinson 功率分配/合成器，并进行了 AlGaN/GaN HEMT 微波功率放大电路的设计，中心频率 5.0GHz 下，单管功率放大器的最大输出功率为 32dBm，附加功率效 率为 34%，双管功率放大器最大输出功率为 35.3dBm，附加功率效率为 28%。关键词：AlGaN/GaN HEMT，小信号模型，大信号模型，功率合成IABSTRACTABSTRACTIn recent years, with the demand of high temperature, high frequency, resist radiation, high performance requirements ，as the representative of the third generationof semiconductor materials, GaN has got rapid development. AlGaN/GaN HEMT devices have broad prospects and huge potential in the fields of high temperature, high frequency, high performance, and resist radiation. Accurate device model is very important for the design of microwave and RF circuit.This paper made a study around AlGaN/GaN HEMT device models, established a equivalent circuit model AlGaN /GaN HEMT device and extracted the parameters, microwave power synthesis are analyzed,a GaN HEMT microwave power combination circuit is designed with the software ADS.Firstly, this paper introduces AlGaN /GaN HEMT device’s structure and working principle. Several small signal models were analyzed. Based on the analysis of small signal linear analysis, AlGaN/GaN HEMT small signal equivalent model were discussed in details. A suitable small signal equivalent model was established. The extraction of the parameters of the model was also studied.Secondary, introduced several big I-V characteristics of DC signal model based on the large signal working condition. A study which is based on Angelov model was made.Finally, microwave powe