高温退火对铸造多晶硅片中位错密度的影响.pdfVIP

M anufacturing Technology DO I: 103969/ jissn1003- 353x 1a, 1b 1a, 1b 1a, 1b 1a, 1b 1a, 1b 辛超 , 周剑 , 周潘兵 , 魏秀琴 , 周浪 , 张运锋, 张美霞 ( 1南昌大学 a. 材料学院, b. 光伏学院, 南昌 330031; 英利能源 ( 中国) 有 公司, 河北保定 071051 ) : 对铸造多晶硅片进行了 1 000~ 1400 的高温退火和不同方式冷 实验, 用显微观察 法对退火硅片及其相邻姊妹片位错密度进行了测量统计研究了退火温度和冷 方式对铸造多晶 硅片中位错密度的影响结果证实: 当退火温度在1 100 及以下时, 硅片的位错密度并没有降 低反而增加了; 当退火温度在 1 3 0 及以上时, 硅片的位错密度明显降低, 其幅度随温度提高 增大; 但退火后如断电随炉冷 而不控制冷 速率, 位错密度又会提高 : 多晶硅; 硅片; 位错; 退火; 冷 : TN30407 : A : 1003- 353X ( 011) 05- 0378- 04 Effect onHigh TemperatureAnnealing on Dislocation Density of Multicrystalline SiliconWafers X in Chao1a, 1b, Zhou Jian1a, 1b, Zhou Panb ing1a, 1b, W eiX iuq in1a, 1b, Zhou Lang1a, 1b, Zhang Y unfeng, ZhangM eixia ( 1a. M aterial Institute; b. P hotovolta ic Institute, Nanchang University, Nanchang 330031, Ch ina; Ying liE nergy (Ch inese) Company im ited, Baod ing 071051, China) Abstract: H igh temperature annealing at 1 000 - 1 400 and various subsequent cooling expermi ents formu lticrystalline silicon wafersw ere carried out. D islocation density of the samp le w afers w as analyzed w ith d islocation m icroscopic observation method. The effects of the annealing temperature and the cooling methods on the d islocation density of multicrystalline silion w ere studied. The results confirm the abnormal phenomenon that the d islocation density of the silicon w afer increases after annealing at 1 100 or below. A fter annealing at 1 3 0 or higher, the dislocation density in the w afers decreases remarkably, increaseswhen the subsequent cooling isn t controlled and the