Electrostatic Force Microscopy and Kelvin Force Microscopy as a精品.pdfVIP

4 Electrostatic Force Microscopy and Kelvin Force Microscopy as a Probe of the Electrostatic and Electronic Properties of Carbon Nanotubes Thierry M´elin, Mariusz Zdrojek, and David Brunel Summary. This chapter addresses recent experimental studies on carbon nan- otubes and nanotube devices using electrical techniques derived from atomic force microscopy. Electrostatic force microscopy (EFM), Kelvin force microscope (KFM), and their variants are introduced. We show how EFM-related techniques are used to image the electrostatic and electronic properties of individual carbon nanotubes on insulators, to manipulate their charge state, and to measure field-emission and band-structure properties of individual nanotubes. We then describe how KFM- related techniques can bring insight into the operation of electronic devices based on carbon nanotubes. We focus here on the case of field effect transistors, and describe how KFM techniques can be used to study charge transfers at the nanotube–contact interfaces, to assess the transport properties in carbon nanotubes, and, finally, to characterize carbon nanotube devices under operation. Key words: Scanning probe microscopy, electrostatic force microscopy, Kelvin force microscopy, charge detection, carbon nanotubes, carbon nano- tube field effect transistor, electrostatics, surface potential measurement. 4.1 Introduction This chapter consists of a review of recent experimental studies on carbon nan- otubes and nanotube devices using electrical techniques derived from atomic force microscopy (AFM). It falls in the conjunction of two recently developed research fields: (1) on the one hand, the field of carbon nanotubes since their discovery by Iijima et al. [1] and the strong interest in the field of nanoelec- tronics following the first carbon nanotube field effect transistor (CNTFET) [2, 3], and (2) on the