chemical vapour deposition of tio and ti2o3 from ticl4h2co2 gas mixtures：从ticl4h2co2气体混合物的化学气相沉积tio和ti2o3精品.pdfVIP

.4 ATIN #OLW/ E L S E V I E R Surface and Coatings Technology 73 (1995) 160-169 Chemical vapour deposition of TiO and Ti203 from TiC14/H2/CO 2 gas mixtures Eva Fredriksson, Jan-Otto Carlsson Thin Film and Surface Chemistry Group,Institute of Chemistry, Uppsala University,Box 531, S-75I 21 Uppsala, Sweden Received 5 September 1994;accepted in final form 12 October 1994 Abstract Chemical vapour deposition of TiO and Ti203 from TiC14/H2/CO 2 gas mixtures was studied. A temperature of 1000°C and pressures in the range (13-6.7) × 103 Pa were utilized. Mainly silica was used as substrate material and in the case of Ti203 (0112) sapphire was also employed. TiO consisted of submicron well-shaped crystallites. A very porous interface between the silica and the TiO layer was observed. Ti203 was composed of rounded crystals with voids in between. No porous interface was observed in this case. X-ray photoelectron spectroscopy analysis revealed that Si was incorporated in the films. Prior to the deposition experiments, thermodynamic calculations utilizing the free energy minimization technique were performed and calculated chemical vapour deposition phase diagrams for oxides in the composition range TiO-TisO15 were constructed. Keywords: Chemical vapour deposition; TiO; Ti203; TiC14/H2/CO 2 process 1. Introduction temperature form 7-TiO with the NaC1