微电子材料与工艺.pdfVIP

第一章第一章 超薄超薄SiOSiO 栅介质栅介质 22 (Ultra(Ultra--thin SiOthin SiO gate dielectric )gate dielectric ) 22 集成电路的发展有两大趋势： I.获得高性能IC (a)单个晶体管尺寸逐渐缩小； (b)增加互连系统的复杂性； II.增大芯片面积，实现多功能集成。 The Si MOSFET is the most important active device in ULSI integrated circuits. Device scaling: gate length of 10m in the early 1970s  90nm, 65nm, 45nm, 32nm    ……. 课程：课程： 《《微电子材料与工艺微电子材料与工艺》》 授课教师：丁士进授课教师：丁士进 Many key roles of thermally grown SiO2 films: • Diffusion masking （扩散掩模）100-200nm; • Surface passivation （表面钝化）; • Field oxide (200~400nm) （场氧隔离）for LOCOS isolation； • Inter-level dielectric (4~20nm) （互连层间介质）; • Trench liners for STI (15~40nm) （浅槽隔离）; • Tunnel oxide in non-volatile memory devices (6~10nm); • Sidewall spacer （边墙隔离）：用于S/D离子注入时起阻挡作用 •Screen oxides for ion implantation (10-20nm): 减小channel效应 •Capacitor dielectric in DRAM: 5-10nm The MOSFET gate dielectric material for application in deep-submicron CMOS ULSI circuits 课程：课程： 《《微电子材料与工艺微电子材料与工艺》》 授课教师：丁士进授课教师：丁士进 The following issues related to gate dielectric (最重要的应用) 1. The structure and role of silicon dioxide (and the Si/SiO2 interface); 2. Dielectric breakdown and defects in SiO ; 2 3. Leakage currents in silicon dioxide films; 4. Models and processes of the growth of ultra-thin oxide films; 5. Strengthening silicon dioxide films through the addition of nitrogen (oxynitrides), and the related problem of boron penetration through gate oxide; 6. Technology of growing ultra-thin oxides on large diameter wafers (200-mm and 300-mm); 7. Limits of silicon dioxide as a gate dielectric material. 课程：课程： 《《微电子材料与工艺微电子材料与工艺》》 授课教师：丁士进授课教师：丁士进 Req