微电子器件实验4模版 medici npn.docVIP

南京邮电大学 课内实验报告 课 程 名： 微 电 子 器 件 设 计 任课教师： 专 业： 微 电 子 学 学 号： 姓 名： 2014/2015学年 第2学期 南京邮电大学 电子科学与工程学院 《微电子器件设计》课程实验第 4 次实验报告 实验内容及基本要求： 实验项目名称：NPN双极晶体管特性模拟TITLE TMA MEDICI Example 2P - NPN Transistor Simulation COMMENT Simulation with Modified Emitter Region COMMENT Initial mesh specification MESH X.MESH WIDTH=6.0 H1=0.250 Y.MESH Y.MIN=-0.25 Y.MAX=0.0 N.SPACES=2 Y.MESH DEPTH=0.5 H1=0.125 Y.MESH DEPTH=1.5 H1=0.125 H2=0.4 COMMENT Region definition REGION NAME=Silicon SILICON REGION NAME=Oxide OXIDE Y.MAX=0 REGION NAME=Poly POLYSILI Y.MAX=0 X.MIN=2.75 X.MAX=4.25 COMMENT Electrodes ELECTR NAME=Base X.MIN=1.25 X.MAX=2.00 Y.MAX=0.0 ELECTR NAME=Emitter X.MIN=2.75 X.MAX=4.25 TOP ELECTR NAME=Collector BOTTOM COMMENT Specify impurity profiles PROFILE N-TYPE N.PEAK=5e15 UNIFORM OUT.FILE=MDEX2DS PROFILE P-TYPE N.PEAK=6e17 Y.MIN=0.35 Y.CHAR=0.16 + X.MIN=1.25 WIDTH=3.5 XY.RAT=0.75 PROFILE P-TYPE N.PEAK=4e18 Y.MIN=0.0 Y.CHAR=0.16 + X.MIN=1.25 WIDTH=3.5 XY.RAT=0.75 PROFILE N-TYPE N.PEAK=7e19 Y.MIN=-0.25 DEPTH=0.25 Y.CHAR=0.17 + X.MIN=2.75 WIDTH=1.5 XY.RAT=0.75 PROFILE N-TYPE N.PEAK=1e19 Y.MIN=2.0 Y.CHAR=0.27 COMMENT Regrids on doping REGRID DOPING LOG RATIO=3 SMOOTH=1 IN.FILE=MDEX2DS REGRID DOPING LOG RATIO=3 SMOOTH=1 IN.FILE=MDEX2DS COMMENT Extra regrid in emitter-base junction region only. REGRID DOPING LOG RATIO=3 SMOOTH=1 IN.FILE=MDEX2DS + X.MIN=2.25 X.MAX=4.75 Y.MAX=0.50 OUT.FILE=MDEX2MP PLOT.2D GRID SCALE FILL + TITLE=”Example 2P - Modified Simulation Mesh” COMMENT Modify properties of polysilicon-emitter region MOBILITY POLYSILI CONC=7E19 HOLE=2.3 FIRST LAST MATERIAL POLYSILI TAUP0=8E-8 MODEL CONMOB CONSRH AUGER BGN COMMENT Initial solution SYMB CARRIERS=0 METHOD ICCG DAMPED SOLVE V(Collector)=3.0 SYMB NEWTON CARRIERS=2 SOLVE COMMENT Setup log files, forward bias base-emitter junction, and + calculate the admittance matrix at 1.0 MHz LOG OUT.FILE=MDEX2PI SOLVE V(Base)=0.2 ELEC=Base VSTEP=0.1 NSTEP=4 + AC.ANAL F