Interfacial AlN formation of SiTiAlCu Ohmic contact for AlGaNGaN high-electron-mobility transistors.pdfVIP

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Interfacial AlN formation of SiTiAlCu Ohmic contact for AlGaNGaN high-electron-mobility transistors.pdf

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Interfacial AlN formation of SiTiAlCu Ohmic contact for AlGaNGaN high-electron-mobility transistors.pdf

Microelectronic Engineering 151 (2016) 60–63 Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: /locate/mee Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors Seonno Yoon a,b, Jangwon Bang a,b, Hi-Deok Lee c, Jungwoo Oh a,b,? a School of Integrated Technology, Yonsei University, Incheon 406-840, Republic of Korea b Yonsei Institute of Convergence Technology, Incheon 406-840, Republic of Korea c Dep. Electronics Engineering, Chungnam National Univ., Daejeon, Republic of Korea article info Article history: Received 20 July 2015 Received in revised form 3 December 2015 Accepted 9 December 2015 Available online 17 December 2015 Keywords: Power transistors Au-free Ohmic contact AlGaN/GaN heterostructure abstract We report on the electrical and microstructural analysis on Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN highelectron-mobility transistors grown on Si (111) substrate. With optimized Si and Ti thickness in Si/Ti/Al/Cu Ohmic metallization, a minimum Ohmic contact resistance of 0.44 Ω mm and speci?c contact resistance of 3 × 10?6 Ω-cm2 with smooth surface morphology were achieved. Signi?cant change in electrical performance and morphology showed high dependence of Ti and Si thickness on the multilayer metal scheme. Importantly, refractory behavior was shown in low annealing temperature, though uniform and continuous TiSix with low work function was formed on AlGaN. However, Ohmic behavior was shown in high annealing temperature, because thin AIN surrounding TiN promotes further N vacancies in GaN than the conventional Ti/Al-based Ohmic contact does. An outer Cu layer has low resistivity and the interfacial Si layer forms TiSix, which works as only a barrier to prevent Cu in-diffusion, not to transport current. As a result, we revealed that Ohmic contact mechanism in Si/Ti/Al/Cu is governed mainly by ?eld emission near the Fermi level or themionic-?eld emission. Microstructural stud