Contact resistance extraction methods for short- and long-channel carbon nanotube field-effect transistors.pdfVIP

Solid-State Electronics 125 (2016) 161–166 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: /locate/sse Contact resistance extraction methods for short- and long-channel carbon nanotube ?eld-effect transistors Anibal Pacheco-Sanchez a,?, Martin Claus a,b, Sven Mothes a,b, Michael Schr?ter a,c a Department of Electrical and Computer Engineering, Technische Universit?t Dresden, Germany b Center for Advancing Electronics Dresden, Technische Universit?t Dresden, Germany c Department of Electronics and Communication Engineering, University of California at San Diego, USA article info Article history: Available online 18 July 2016 The review of this paper was arranged by Jurriaan Schmitz Keywords: CNTFET Contact resistance Y-function method abstract Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of short- and long-channel CNTFETs. While for TLM special CNT test structures are mandatory, standard electrical device characteristics are suf?cient for the Y-function methods. The methods have been applied to CNTFETs with low and high channel resistance. It turned out that the standard Y-function method fails to deliver the correct contact resistance in case of a relatively high channel resistance compared to the contact resistances. A physics-based validation is also given for the application of these methods based on applying traditional Si MOSFET theory to quasi-ballistic CNTFETs. ó 2016 Elsevier Ltd. All rights reserved. 1. Introduction Carbon nanotube ?eld-effect transistors (CNTFETs) have the potential to become relevant for RF electronics due to the outstanding electrical characteristics of the carbon nanotubes (CNTs) used as a channel. Fabricated CNTFETs have already achieved an intrinsic transit frequency of 80 GHz and extrinsic transit and maximum oscillation fr