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Contact resistance study of various metal electrodes with CVD graphene.pdf
Solid-State Electronics 125 (2016) 234–239
Contents lists available at ScienceDirect
Solid-State Electronics
journal homepage: /locate/sse
Contact resistance study of various metal electrodes with CVD graphene
Amit Gahoi, Stefan Wagner, Andreas Bablich, Satender Kataria, Vikram Passi, Max C. Lemme ?
University of Siegen, School of Science and Technology, H?lderlinstr. 3, 57076 Siegen, Germany
article info
Article history: Available online 27 July 2016
The review of this paper was arranged by Jurriaan Schmitz
Keywords: Chemical vapor deposited (CVD) graphene Contact resistance Graphene transfer Rapid thermal annealing Transfer length method (TLM)
abstract
In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying channel widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with ?ve metals: gold, nickel, nickel/gold, palladium and plat-
inum/gold. The lowest value of 92 X lm is observed for the contact resistance between graphene and
gold, extracted from back-gated devices at an applied back-gate bias of à40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.
ó 2016 Elsevier Ltd. All rights reserved.
1. Introduction
In order to fully exploit the exceptional properties of graphene, the electrical contact resistance (RC) associated with the metalgraphene junction should be low. In fact, low value of RC is id
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