Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si.pdfVIP
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Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si.pdf
Journal of Alloys and Compounds 699 (2017) 1134e1139
Contents lists available at ScienceDirect
Journal of Alloys and Compounds
journal homepage: /locate/jalcom
Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-?lm Mg2Si
Bo Zhang a, Tao Zheng a, Qingxiao Wang a, Yihan Zhu b, Husam N. Alshareef b, Moon J. Kim a, Bruce E. Gnade a, *
a Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States b Physical Sciences and Engineering Division (PSE), 4700 King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
article info
Article history: Received 21 October 2016 Received in revised form 15 December 2016 Accepted 17 December 2016 Available online 28 December 2016
Keywords: Thermoelectric Thin-?lm Mg2Si Speci?c contact resistivity (SCR) Cross Bridge Kelvin Resistor (CBKR) method Ni diffusion Stability
abstract
We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni
electrodes on Mg2Si thin ?lms. Thin-?lm Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each
contact metal. The speci?c contact resistivity (SCR) was determined using the Cross Bridge Kelvin
Resistor (CBKR) method. Ni contacts exhibit the best thermal stability, maintaining stability up to 400 C,
with a SCR of approximately 10à2 U-cm2 after annealing. The increased SCR after high temperature
annealing is correlated with the formation of a Mg-Si-Ni mixture identi?ed by cross-sectional scanning
transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and
other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its
reaction with the Mg2Si ?lm.
? 2017 Elsevier B.V. All rights reserved.
1. Introduction
Thermoelectric generators (TEG) can be used to transform was
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