纳米硅MOS器件中氧化硅薄膜制备研究.docVIP

纳米硅MOS器件中氧化硅薄膜制备研究 摘 要 氧化硅薄膜具有良好的绝缘性能，并且稳定性好，硬度高，膜层牢固，熔点高，抗磨耐腐蚀，应用十分广泛。在微电子技术中被用作扩散掩蔽层和MOS器件的绝缘栅等。薄膜的制备方法很多，通常制备方法有磁控溅射法、热氧化法、凝胶-溶胶法液、液相沉积、化学气相沉积等。 本设计主要集中于研究PECVD法制备氧化硅薄膜，并分别在反应气体流量比、射频功率、淀积腔内压强、淀积时间上进行参数控制，研究各个参数控制条件下氧化硅薄膜微观结构、形貌、光学特性等。设计中利用原子力显微镜分析了薄膜的表面形貌、颗粒尺寸和粗糙度等，利用椭圆偏振测厚仪测量薄膜的折射率和膜厚，从而得出适宜具有特定性能氧化硅薄膜的最佳生长条件。 关键词 等离子体增强化学气相沉积；氧化硅薄膜；表面形貌；折射率 Preparation and study of silicon oxide film in nanocrystaline silicon MOS devices Abstract Silicon oxide film is used widely in microelectronic industries because of its good insulating properties, good stability，high hardness, high melting point et al. In microelectronic technology，silicon oxide thin films are used as diffusion masking layer and insulated gate layer in MOS devices，and so on. There are many kinds of method to prepare silicon oxide films, such as magnetron sputtering, thermal oxidation, chemical vapour deposition, sol-gel technology, liquid phase deposition et al. Silicon oxide films are deposited by plasma enhanced chemical vapour deposition(PECVD) in this design. The micro-structure，surfacial morphology，optical properties of silicon oxide films were investigated by different measurement technology. The properites of films are affected regularly by some parameters including RF power，gas flow ratio，chamber pressure and deposition time. AFM was used to analyze the film surface， grain size and surfaced roughness; Ellipsometer was used to analyze the refractive index and the thickness. The appropriate growth conditions can be obtained according to analysis of property of the silicon oxide films prepared by PECVD. Key words Plasma-Enhanced chemical vapour deposition；ilicon oxide film ；Surface micro-graph ；Refractive index 第1章 绪论 1 1.1 引言 1 1.2氧化硅薄膜的应用 2 第2章 氧化硅薄膜制备方法 5 2.1 磁控溅射沉积 5 2.2 热氧化法 5 2.3 溶胶凝胶法 6 2.4 液相沉积 6 2.5 化学气相沉积（CVD） 7 2.5.1 低压化学气相沉积 7 2.5.2 常压化学气相沉积(APCVD) 8 2.5.3 光化学气相沉积法(PCVD) 8 2.5.4 等离子体增强化学气相沉积（PECVD） 8 第3章 实验 11 3.1 实验研究路线 11 3.2 实验设备及材