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Effect of thickness on the photovoltaic properties of BiFeO3
thin film#
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ZHOU Yine1, TAN Xinyu2, YU Benfang1, LIU Li1, YUAN Songliu1, JIAO
Weihong1**
(1. School of Physics, Huazhong University of Science and Technology, 430074;
2. Research Institute for New Energy, China Three Gorges University, 443002)
Abstract: We study the effects of film thickness on lattice parameters, direct band gap and
photovoltaic outputs in the sol–gel derived BiFeO3 thin films. With the film thickness change, the great
transitions have taken place in the preferred orientation and lattice parameters. Furthermore, the
photovoltaic outputs are significantly dependent on the film thickness. The results show that the open
circuit voltage gradually increases and the short circuit current reciprocally decreases with the increase
of film thickness.
Key words: Photovoltaic properties; BiFeO3 film; Film thickness
0 Introduction
The photovoltaic properties of ferroelectric materials have become a research hotspot on
account of the potential application values for photovoltaic cell and photo-driven actuator or
optical sensor in micro-electromechanical systems. It is found that BiFeO3 (BFO) exhibits high
sensitivity and fast response to the visible light due to the band gap in the visible range [1,2].
Furthermore, BFO is the single-phase multiferroic material at room temperature owing to its high
ferroelectric Curie temperature of 1100 K and high antiferromagnetic Neel temperature of 640 K.
So the ferroelectric BFO can respond to solar illumination to generate the steady-state
photovoltage and photocurrent because of the separation and movement of photo-induced
electron-hole pairs by the internal self-polarization field. In recent years, photovoltaic effects have
been reported in single crystalline BFO bulk, BFO ceramics and BFO thin films [3-5]. In particular,
a very attractive feature of ferroelectric photovoltaic materials is their tunable photovoltaic outputs
with the
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