E$leq$ 90 keV能区的质子在硅中的能损的研究.docVIP

E≤ 90 keV 能区的质子在硅中的能损的研究 张硕 ，王铁山 ，赵江涛 ，方开洪 ，王强 ，周钰珊 ，张建东 兰州大学核科学与技术学院，兰州　 730000. 摘要：为了测量和修正质子在 keV 能区的能损，本工作利用 10、25、80 和 90 keV 的质子沿 随机取向注入单晶硅靶，并采用共振核反应分析了氢在硅中的分布，从分布结果来看，注入的 质子在硅中基本不扩散，并由此得出不同能量的质子在硅靶中的投影射程。基于离子在物质中 的射程的理论和实验上得到的投影射程研究质子在 keV 能区的能损，结果显示，实验测得的能 损与 SRIM 给出的结果基本符合。本工作提供了一种实验上测量质子在物质中的能损的方法。 关键词：质子，电子能损，单晶硅 中图分类号： O571.42+2 Electronic energy loss of H+ ions in silicon in E≤ 90 keV energy region ZHANG Shuo ，Wang Tie-Shan ，ZHAO Jiang-Tao ，FANG Kai-Hong ，WANG Qiang ，ZHOU Yu-Shan ，ZHANG Jian-Dong School of Nuclear Science and TeCHNology Lanzhou University, Lanzhou, Gansu Province 730000 Abstract: The uncertainty of existed experimental energy loss of hydrogen ions in low energy region is rather large. However it is always a challenge to measure the energy loss in low energy region in experiment. In this work, the projected range of ions in thick target was used to investigate the electronic energy loss of H+ ions in single crystal silicon. Firstly, the single crystal silicon targets were implanted by H+ ions with energies of 10, 25, 80, 90 keV in random direction at room temperature. Then, the depth pro?les of implanted hydrogen were measured by resonance nuclear reaction 1H(15N,γα)12C analysis. The projected ranges of as-implanted H+ ions with di?erent energies were obtained from the depth pro?les because the implanted hydrogen showed limited mobility in silicon. Finally, the electronic energy loss of H+ in silicon was derived from the projected range data with a code based on Projected Range Algorithm (PRAL). The result was roughly consistent to electronic energy loss of SRIM. This work provided an experimental method to exactly detect the energy loss of hydrogen ions in low energy where the hydrogen implanted showed limited mobility. Key words: H+ ions, electronic energy loss, single crystal silicon 基金项目： Doctoral Grand of Ministry of Education of China (20100211110028) 作者简介： Zhang Shuo（1988-）， male, doctor candidate, major research direction: ion be