铝互连线迁移可靠性研究-集成电路工程专业毕业论文.docxVIP

中文摘要随着芯片特征尺寸越来越小，集成度越来越高，对芯片可靠性的研究变得 中文摘要 随着芯片特征尺寸越来越小，集成度越来越高，对芯片可靠性的研究变得 曰益重要，而其中电迁移现象是影响互连引线的主要可靠性问题。在O．13岬 以上的制程中，主要采用铝铜合金作为金属导线的材料。选择铝的主要原因是 因为它具有较低的电阻率，并具有和硅片制造工艺的兼容性，而且其成本相当 低廉。但其自身面着临层出不穷的电迁移问题，所以研究铝互连制造工艺，了 解电迁移现象并从工艺制程过程中预防电迁移对提高微电子制造技术水平有积 极意义，并可以获得工业应用价值。 论文系统地研究了制造工艺对铝互连电迁移可靠性的影响机制。详细论述 了铝互连制造的工艺流程，结构特性，分析了铝互连技术的制造特点，总结出 制造工艺对其重要物理特性的影响。在已知的电迁移理论和经验结论基础上， 将工艺制造与电迁移关系定量地联系了起来。通过实验列举并阐述了工艺参数 变化对铝互连线电迁移可靠性的影响。 本论文的实验部分主要从金属薄膜沉积、刻蚀、清洗等制造工艺入手，分 别阐述了各个工艺的制造特点以及工艺参数对铝互连线电迁移可靠性的影响。 结合生产实例对相应的工艺参数进行优化，从而改进制程能力，提高铝互连线 的电迁移可靠性。 关键词： 铝互连，电迁移，制造工艺，竹节结构，芯片级可靠性测试 k t ABSTRACTThe ABSTRACT The chip reliability performance is the important topic of semiconductor in． dustry along with the chip size reduction，and electro-migration phenomenon is the major reliability failure for backend interconnection．The A1．Cu interconnection is the most popular process when minimum characteristic dimension than larger 0．1 3pm．The reason to select AL because it has low resistance and can easily corn． patible with Si process，low cost is anther benefit．But Ai interconnect also suffer electro。migration issues continuously．So studying the process effects on Al elec． tro-migration problems and understands EM phenomena well，will provide solutions for industry．It is also have benefit to improve the process capability for semicon． ductor industry． This paper fan out the fabrication process effect on electro．migration，detail descried Al interconnection process，structures，and analysis the key point of AI de． position process，etch process，clean process．It summarized the existing theories and deduced the correlation between process with electro—migration base on experiment result． In the experimental part．the dissertation presented the influencing factors from different process，such as CVD，etch，clean．And provide the method to im． prove electro—migration from process point of view．The improvement methods have applied in manufacture and gain the benefit already． 『I KEYWORDS： Aluminum interconnects，Ele