集成电路光刻工艺Litho-process-introduction.pptxVIP

;What is Micro Lithography;Scanner/Stepper Model ;ASML Scanner Overview: ;;DUV~248nm exposure length; For 0.18/0.35um etc Key layer; Exposure Principle ;;Resolution (request low) Depth of Focus (request high);Process flow of Lithography;ACT-8 Track system overview;ACT-8 Track system overview;ACT-8 Track system overview;Wafer transfer/process flow in track;Track key process introduction-ADH;Track key process introduction-ADH;Track key process introduction-ADH;Track key process introduction-ADH;Track key process introduction-COT;Track key process introduction-COT;COT simple recipe example:;Resist coating PR dispense on RRC, then spin out together.;Track key process introduction-COT;EBR:其它晶圓處理工具，例如步進機，是握持晶圓的邊緣。如果光阻薄膜延伸到邊緣，則在這些處理中會碎裂，並產生particle。為防止這種問題，光阻溶劑 (稀釋劑等) 吐到晶圓表面周圍，以移除光阻。 Backside rinse:晶圓在光阻塗佈處理中，底部會黏上光阻，造成在oven中烘烤時不平整、步進機曝光時脫離位置、並在晶圓表面底部產生particle。為防止這種問題，從nozzle尖端滴下溶劑 (稀釋劑)，晶圓底部的光阻則會熔化與移除。;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-COT;Track key process introduction-HOT Plate;Track key process introduction-HOT Plate;Track key process introduction-HOT Plate;Track key process introduction-WEE;Track key process introduction-WEE;Track key process introduction-PEB;Track key process introduction-PEB;Track key process introduction-PEB;Track key process introduction-DEV;功能說明 : (1)develop process station使用puddle方法來執行顯影處理。spin chuck以真空吸附晶圓，將process recipe指定 的顯影nozzle移動到晶圓中央。其次利用晶圓的表面張力，沖洗溫度有控制的顯影液，進行顯影。 (2) Nozzle Type: H Nozzle,E2 Nozzle,E3 nozzle, LD Nozzle (3) To remove the developer solution puddled on the wafer surface after the wafer is developed, DI water is slow-leaked on the center of the wafer surface from the nozzle tip to wash the developer solutio