不同退火温度的p型氮化镓薄膜光学特性的研究光学专业论文.docxVIP

各向异性的特征。(2)利用拉曼空间相关模型对不同退火温度的P型GaN 各向异性的特征。(2)利用拉曼空间相关模型对不同退火温度的P型GaN 外延层的平面应力进行分析研究。(3)对不同退火温度的P型GaN的光致 发光光谱进行研究，寻找最优的退火温度，分析其中发光峰的机理。分析 光致发光光谱随温度变化的规律。 关键词：P型氮化镓金属有机化学气相沉积椭圆偏振光谱拉曼散射 光致发光光学常数平面应力 万方数据 STUDY STUDY ON THE OPT I CAL OHARACTERS OF P-TYPE GaN EP l TA)(I AL FILMS WITH FIFFERENT ANNEALING TEMPERATURE ABSTRACT The third generation of wide bandgap semiconductor materials，especially the III-Nitride semiconductors and their alloy represented by gallium nitride (GaN)had caught a lot of attention and amount of research had been done on them，since they have many outstanding characters such弱wide bandgap，a variable wide wavelength range，a good elevated temperature properties and SO on．So far,GaN and GaN baSed semiconductor material have been widely applied in manufacturing LED，semiconductor laSer and photoelectric detector． Because GaN material has a high n-type background carder concentration， High-quality p-type GaN access has been a difficult problem for a long time． Now,Dealing with Mg—doped GaN by rapidly high temperature annealing， High．quality P．type GaN can be obtained．Researching on the optical constant of GaN is necessary for the GaN based ultraviolet photodetector．Since most of the researches which had been done 011 the optical constam of GaN were about the wavelength range below the bandgap，it is important to find out a reasonable mathemmical formula to describe the optical constant iIl the full wavelength range．The annealing temperature haS an effect on the photoluminescence and 万方数据 the the quality of semiconductor material．Since the optimized growing parameters are important for growing a high quality GaN epitaxial film，it is wealthy to make a system research on the optimized growing parameters． This work firstly introduces the overview of GaN，the base characters of GaN，the method to access p-type GaN，the difficulties of growing high quality p-type GaN，the GaN epitaxial film growing technique and the sample related in this research．Then ellipsom