去除光刻胶的新干法工艺.pdfVIP

1 12 VACUUM2003 1 去除光刻胶的新干法工艺 Rich ard Bers in, A m anda Hor n , H an Xu , M oham ed Boum erzou g, Dou g as Dopp 姜健　编译 ( U L V A C , 200131) : , , , , , , DI ( EN VI RO ) 12 10000 / , 5 : ; ; ; ENVIRO. : T N 305 . 7 : B : 1002-0322( 2003) 0 1-00 12-05 A new dry process for photoresist removal Richard Bersin , A m anda Horn , Han Xu , M ohamed Bo um erz oug, Doug as Dopp T r ans ated and compi ed by JIA N G J ian ( . , 200131, ) UL VA C SH A N G H A I CO L T D Shang ha i China Abstract: P hoto -r esist r emo va fo ow ing dry et ching o r hig h -dose ion imp antation co nv entio na y emp o ys so v ent s and acid , sometimes w as preceded by a dr y o xy gen-based p asma ash befo re . T hese co st y , hazardou s, and pu utiv e w et chemica s ar e - , , then dispo sed of thr ough unfr iend y env iro nment a w aste dispo sa pro cesses w hich r esu ts in g o ba w arming substantia en- erg y co nsumptio n , g ro und w ater co ntamination , et c. A new c eaning pr ocess ( EN V IRO ) that dr y ashes etchs resist and r e- maining mater ia 100% simu t aneo u s y is r emo ver ed by DI w at er so ub e has been qua if ied in manuf act ur ing and successfu y u sed fo r mo re t han 12 m onths . F or a 10, 000 w af er -start / w eek f actor y , this pr ocess can sav e mor e than 5 mi ion/ year in so vent costs a one. Key words: p asma dry et ch; chem ica w et et ch ; pho to -resist ; ENV IRO . 1 ( V IA ) T iN , , 4 , 3 , CF CHF A r , ( 1) , , ,