cunb纳米多层膜制备及热稳定性分析word格式论文.docxVIP

AbstractNano-multilayer films are found in a variety of fields due to their extraordinary mechanical, optical, electrical and magnetic properties. Since nano-multilayer films are always used at elevated temperature, it is important to study their thermal stability. The thermal stability of the immiscible Cu/Nb system was investigated at the present work. In addition, a triple junction point model obtained by sputtering films on monocrystal or polycrystal with large grain was used to calculate the dynamic parameters of triple junctions.Cu/Nb nano-multilayer with single-layer thicknesses of 75 nm were prepared on Si (100) substrates by magnetron sputtering. And then, the samples were annealedin vacuum furnace at 700 ℃ for 1 h. TEM and XRD were used to investigate themicrostructure before and after annealing. For as-deposited samples, the in-plane nanocrystalline grains are columnar with distinct Cu-Nb interfaces and preferential deposited plane of (111) and (110) for Cu and Nb respectively. After annealing, undesirable diffusion occurred between multilayer and Si substrate and the lamellar structure was ruined.100nm NbN diffusion barrier deposited by reactive magnetron sputtering was utilized to suppress the diffusion between Cu/Nb multilayer and Si substrate. XRD, SEM, XPS were employed to characterize the structure, surface morphology, composition and depth profile of (Cu/Nb multilayer)/NbN diffusion barrier/Si substrate system respectively. The results show that the NbN layer has a high diffusion barrier performance, and can be a promising material used in ultra large scale integration (ULSI) devices and other devices that need diffusion barrier layers. In our study, NbN film with thickness of 100nm could suppress Cu-Si interdiffusionand reaction up to 700 ℃ for 1 h. However, when temperature is 750 ℃, obviousinterdiffusion and/or interreaction of Si and Cu occurred, and the contact system destroyed with the formation of CuSix. It is proposed that the defects s