cuins2薄膜太阳能电池背电极和吸收层的制备及性能分析word格式论文.docxVIP

AbstractCuInS2, as a ⅠB-ⅢA-ⅥA compound, is a direct band gap semi-conductor. Its structure, properties and preparation methods are similar with the chalcopyrite CuInSe2 absorption material which has been widely studied. Both of them have highabsorption coefficient (105 cm-1), good radiation performance, high conversion efficiency and long service life. The absorption material made of CuInS2 semiconductor has a characteristic of intrinsic defects from the auto-doping, not doped with other elements, which makes it become a more potential material for solar cells.The Mo film, as back contact of the CuInS2 thin film solar cell, will directly affect the quality of the CuInS2 absorption layer, and CuInS2 film which is the absorption layer of CIS thin film solar cell, its performance also has an important impact on the performance of the cell. So studies on the preparation and characterization of the Mo film and CuInS2 film are particularly significant. In this paper, Mo films and Cu-In alloy films were prepared by DC-magnetron sputtering, CuInS2 films were prepared through vulcanization of Cu-In alloy films. The effects of the preparation parameters on the microstructure and properties of Mo films and CuInS2 films were investigated. The main work and results are summarized as follows:Mo films have been deposited in a DC-magnetron sputtering system. The effects of sputtering power and the pressure of Ar on the microstructure of the Mo films have been investigated. When the sputtering power was 90 W and the pressure of Ar was0.5 Pa, the Mo films were deposited rapidly, dense and smooth ， the roughness issmaller. Then the effects of annealing time and thickness on the microstructure and electrical properties of the Mo films were further studied. The results showed that with the extension of annealing time, the surface of the Mo film was more compact, and the grain size increased, but the resistivity decreased. The reflectivity of the Mo films decreased at first and then in