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4H_SiC肖特基微型同位素电池_英文_
E S
E S Device Technology
4HSiCSchottky Betavoltaic Micro Battery
Gao Peng, Li Xiaoying, Qiao Dayong, Yao Xianwang, Zang Bo
(M icro and N ano E lectromechanical Systems Labor atory ,
N orthw estern P oly technical University, X ian 7100 72, China)
Abstract: A semiconductor betavoltaic battery provides a good solution to power supply of
E S in terms of its long lifetime, easy integration and high environmental adaptability. With
the wide bandgap of 4HSiC, the4HSiCSchottky betavoltaicbattery wasfabricated. Thedeple
tion layer thickness and doping concentration were optimized, and the Schottky metal was cho
2 63
sen. The betavoltaic battery was fabricated and tested under the illumination of 4 mCi/cm Ni
2
source. The results show that the obtained power density is 313 nW/cm with an open circuit
- 8 2
voltage of 05 V, a short circuit current density of 313 10 A/cm , and a conversion efficien
cy of 13 %. The output performance of the battery was compared with those of Si based planar
and 3D structure batteries. The comparison results reveal that the 4HSiC Schottky betavoltaic
battery can obtain higher power density. The performance of the 4HSiC Schottky betavoltaic
battery can be improved by some methods in the future, such as enhancement of the barrier
height, improvement of the process quality, change of the type of the isotope, etc.
63
Key words: E S; betavoltaic effect; m
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