有哪些信誉好的足球投注网站design and analysis of double-gate mosfets for ultra-low power radio frequency identification (rfid) device and circuit co-design设计和分析的双栅mosfet超低功率无线电频率识别(rfid)设备和电路共同设计.pdfVIP
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design and analysis of double-gate mosfets for ultra-low power radio frequency identification (rfid) device and circuit co-design设计和分析的双栅mosfet超低功率无线电频率识别(rfid)设备和电路共同设计
J. Low Power Electron. Appl. 2011, 1, 277-302; doi:10.3390/jlpea1020277 OPEN ACCESS Journal of Low Power Electronics and Applications ISSN 2079-9268 /journal/jlpea/ Article Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design Ramesh Vaddi 1,*, Rajendra P. Agarwal 2, Sudeb Dasgupta 3 and Tony T. Kim 1 1 VIRTUS, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore; E-Mail: thkim@.sg 2 Shobhit University, Meerut 250110, Uttarpradesh, India; E-Mail: prajanag@ 3 Micro Electronics and VLSI Group, Department of Electronics and Computer Engineering Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India; E-Mail: sudebfec@iitr.ernet.in * Author to whom correspondence should be addressed; E-Mail: rvaddi@.sg; Tel.: +65 Fax: +65-6794-3661. Received: 16 May 2011; in revised form: 29 June 2011 / Accepted: 30 June 2011 / Published: 8 July 2011 Abstract: Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for strong in
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