纳米zno基掺杂气敏元件阵列的制备与特性 preparation and properties of doped nanometer zno gas sensor array.pdfVIP

第26 卷 第2 期 电 子 元 件 与 材 料 Vol.26 No.2 2007 年2 月 ELECTRONIC COMPONENTS AND MATERIALS Feb. 2007 研 究 与 试 制 纳米ZnO 基掺杂气敏元件阵列的制备与特性 杨 勇，柏自奎，张顺平，蔡水洲，曾大文，谢长生 （华中科技大学塑性成型模拟及模具技术国家重点实验室，湖北 武汉 430074） 摘要: 以金属蒸气氧化法制备的纯纳米 ZnO 为气敏原料，通过丝网印刷技术在 Al2O3 基片上制得纯 ZnO 和掺杂 ZnO 的气敏元件阵列。结果表明，元件阵列具有低的功耗，纯ZnO 气敏元件阵列在 350~400 ℃对橙汁、可乐、酒精和 汽油有较高的敏感性，灵敏度分别为 2.9 ，2.9 ，53.5 和 43.4 。通过 Bi O +Cu O 的掺杂，可以降低纯 ZnO 的电导，并 2 3 2 进一步提高气敏元件在 250~350 ℃温度区间对汽油的敏感性。并对其气敏机理进行了探讨。 关键词: 电子技术；气敏元件阵列；纳米ZnO；丝网印刷；电导 中图分类号: TP212 ；TP305 文献标识码:A 文章编号:1001-2028 （2007 ）02-0046-03 Preparation and properties of doped nanometer ZnO gas sensor array YANG Yong, BAI Zi-kui, ZHANG Shun-ping, CAI Shui-zhou, ZENG Da-wen, XIE Chang-sheng (State Key Laboratory of Plastic Forming Simulation and DieMould Technology, Huazhong University of Science Technology, Wuhan 430074 ,China) Abstract: Pure ZnO nanoparticles were produced by metallic vapour oxidation method. Based on this raw material and it’s dopant, gas sensor array was fabricated onto Al O ceramic substrate through screen-printing technique. The results show 2 3 that gas sensor array has low-power, the gas sensor array of pure ZnO exhibited higher sensitivity to orange juice, cola, alcohol and gasoline at 350~400 ℃, the resistance sensitivities are as follows: 2.9, 2.9, 53.5 and 43.4. The conductivity of pure ZnO could be decreased by doping of Bi O +Cu O. The sensitivity of the doping sample is higher than that of pure ZnO sample at 2 3 2 250~350 ℃, which indicate that gas sensor a