WAT 电性参数介绍(WAT Parameters introduction).ppt

WAT Parameters Review Speaker: Alan Huang Flow Why WAT? WAT Parameter Review. Process test Methodology. Device test Methodology. Process Factor Influence on WAT Para. WAT Application General Guide-line when WAT fail Example introduce Why WAT? Debug the Process Error. Monitor Process Window. Check Design Rule. Control the Process Parameters(SPC). Reliability Characterization. Device Modeling for Circuit Design. Develop next Generation. Device Categorization Active Device MOSFET(N/P),Field Transistor,BJT,Diode Passive Device Resistor,Capacitors Design rules Isolation,lines(Spacing,Continuity) contact,extension Resistor Diffusion regions N+,N-,P+,N-Well,P-Well,Deep-NW Thin films P1,P2,M1,M2,M3 Contact: C3 to N+/P+,Via C3 to P1,P2 WAT Parameter Review Process Part: Spacing (Bridge,short) Continuity (Open) Isolation Sheet Rs Contact Rc Kelvin Structure for Resistance Integrity (Inter layer dielectric) Extension rule check CD measurement Junction leakage Device Part: Gm (Vth,Current Gain) Idsat (Asym) Ioff Swing Gamma factor BKV Isub Leff,Rext,Weff Field Device test Capacitance Process Part: (1) Spacing (Bridge,short) Define：验证在Process中，同层/同层之间的隔绝能力! Measurement method： Force 1uA电流到导线上，假若线路中有short，则测量出的电压值就偏低(7volt.需注 意此 Structure之 bottom layer可垫其它layers, 以模拟不同topography下Photo.Etching 的能力！ Process Part: (2) Continuity (Open) Continuity 的值可反映出Metal,Poly 1 or Poly 2 CD 的控制能力！一般来说，此项参数 要与Spacing要同时来看，如此才能判定 Layer的status是否正常！ Process Part: (3) Isolation Define：验证在 Process中，两不同层之间的隔绝能力！ PS：此Pattern要注意,若oxidation quality 太差,亦会影响到P1/C3是否short的误判 Isolation example：P1/C3, P2/C3, P1/P2, M1/M2… Process Part: (4)Sheet（薄层电阻 Rs） Define：因厚度测量不易，故Define之 σ =1/ρ=nqμ R=V/I=ρ(L/WT)=(ρ/T)x(L/W) Rs= ρ/T=Rx(W/L) PS：σ(Conductivity 传导系数)；ρ(Resistivity 电阻率)； μ(mobility 迁移率)； n(concentration 浓度)；T(thickness 厚度)； Process Par