高亮度锥形半导体激光器-发光学报.PDF

第37卷摇 第8期 发摇 光摇 学摇 报 Vol郾37 No郾8 2016年8月 CHINESEJOURNAL OF LUMINESCENCE Aug. ,2016 文章编号:1000鄄7032(2016)08鄄0990鄄06 高亮度锥形半导体激光器 * 李摇 景,邱运涛 ,曹银花,王摇 青,尧摇 舜,秦文斌,刘友强,王智勇 (北京工业大学 激光工程研究院,北京摇 100124) 摘要:介绍了由双量子阱非对称波导结构外延片刻蚀成的带有脊形波导结构的锥形半导体激光器。 该激光 器有效抑制了p型区域对激光的影响,减小了半导体激光快轴方向的发散角,同时采用脊形结构和锥形结构 的组合获得了高亮度激光。 实验中,在电流7 A时获得了中心波长963 nm、连续功率4.026 W 的激光输出。 测得慢轴方向和快轴方向激光光束参数乘积分别为1.593 mm ·mrad 和0.668 mm ·mrad。 关摇 键摇 词:半导体激光器;锥形波导;脊形波导;高亮度;高光束质量 中图分类号:TN24;TN31摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx0990 High Brightness Tapered Diode Laser * LI Jing,QIU Yun鄄tao ,CAO Yin鄄hua,WANG Qing,YAO Shun, QIN Wen鄄bin,LIU You鄄qiang,WANGZhi鄄yong (Institute of Laser Engineering,Beijing University of Technology,Beijing 100124,China) *Corresponding Author,E鄄mail:qyt@ Abstract:Tapered diode laser with ridgewaveguidewas introduced andformed through etching the wafer with asymmetrical waveguide structure and double quantum walls. In the laser,the negative effect of p鄄cladding layer was decreased and the vertical divergence angle was reduced. The high brightness power is arrived on account of the combination of the ridge waveguide and the taper waveguide. In experiment,the laser delivers976 nm and4 W CW at7 A current. The slow direc鄄 tion beam quality and the fast direction beam quality are measured of 1.593 mm ·mrad and0.668 mm ·mrad,respectively. Key words:diode laser;taperedwaveguide;ridgewaveguide;high brightness;high beam quality 半导体激光在光束质量上还有很大的不足,而激 1摇 引摇 摇 言 光芯片采用锥形结构是提高半导体激光的光束质 半导体激光器以重量轻、体积小、光电转化率