侯晓波,查良镇范垂祯,许生.pdf

第 6 期 真　　　　空 1999 年 12 月　　　　　　　　　　V acuum V acuum T echno logy and M aterial 1 ( ) 文章编号: 1999 反应溅射制备 SiO2 膜的问题及进展 　侯晓波, 查良镇　　　　　　　　　范垂祯, 许　生　　　　 ( ) ( ( ) ) 清华大学电子工程系, 北京　100084 　 豪威科技 集团 有限公司, 广东　深圳　518057 M a in Problem s and D evelopm en ts in D eposition of SiO2 by Reactive Sputter ing , HOU X iao bo CHA L iang zhen ( , 100084, ) T sing hua U n iversity B eij ing Ch ina , FAN Chu i zhen XU Sheng (H IV A C T ech (G roup ) CO. ,L TD . S henz hen 518057, Ch ina) , Abstract: R F m agnetron sputtering has been app lied to SiO 2 depo sition fo r a long tim e but fo r econom ic m ass p roduction of film coating on large size its use is lim ited due to the h igher co st and . low er efficiency D ram atic developm ents to study and so lve the key p roblem s in reactive sputtering , , . techno logy such as arcing and disappearing anode have been ach ieved during recent years It m akes reactive sputtering extend to depo sition of insulating film , including SiO 2 , and becom e a re m arkable trend in p roducing th in dielectric film. T he m ain p roble