新型忆阻细胞神经网络的建模及电路仿真_张小红.pdfVIP

28 8 © Vol. 28 No. 8 2016 8 Journal of System Simulation Aug., 2016 张小红，廖琳玉，俞梁华 ( 341000) 作为继电阻、电容、电感三大电路基本元件外的第四类电路元件忆阻器，可模拟大脑突触神 经网络的存储记忆功能。构建一个传统三维细胞神经网络，利用磁控忆阻器的非线性特性替换传统 细胞神经网络的输出模块。采用Multisim 通用电路元件构建磁控忆阻等效电路，在电路整体设计上 简化了输出函数模块数量，与具有混沌行为的CNN 系统相比，新型忆阻CNN 电路不仅展现出了混 沌吸引子现象，而且忆阻内部的磁能量随细胞状态而变化，可完全达到等效输出函数的忆导值。数 值计算与电路仿真结果验证了忆阻细胞神经网络的混沌特性及新设计方法的可行性，在信号处理、 同步控制与图像加密等方面具有现实的应用价值。 细胞神经网络；忆阻器；混沌；分段线性；电路仿真；必威体育官网网址通信 TP391.9/O415.5 A 1004-731X (2016) 08-1715-11 DOI:10.16182/ki.joss.2016.08.002 Novel Modeling of Memristive Cellular Neural Network and Its Circuit Simulation Zhang Xiaohong, Liao Linyu, Yu Lianghua (School of Information Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China) Abstract: The memristor as the fourth fundamental circuit component included along with the resistor, capacitor and inductor could simulate the storage memory function of brain neural network. A traditional three-dimensional CNN was designed, and the output function was implemented with the nonlinear characteristics of a flux-controlled memristor. The conventional electronic devices in Multisim were utilized to simulate flux-controlled memristor which simplified the output function part of the circuits. To compare with the CNN system which has chaotic behaviors, the circuits of novel memristive cellular neural network not only can show a chaos attractors phenomenon, but also the inner magnetic energy of memristor is changed with state of CNN to achieve the equivalent values of ou