紫外光图像传感器件.pptVIP

紫外光图像传感器;Image Sensor;按构成元件分类： CCD（Charge Coupled Device） CMOS（Complementary Metal-Oxide Semiconductor）;按成像原理分类 Photographic Photoelectric Photoconductive (Absorb the photons into the semiconductor substrate have sensitivities over a broad range of wavelengths. Examples : CCD , CID) Photoemissive (Use various photocathodes that are tailored to be sensitive to a specific limited-wavelength interval. Examples : MCP , EBCCD , Vidicon);Ultraviolet Image Sensor;Applications of UV;280–400 nm: Medical imaging of cells 300–320 nm: Light therapy in medicine 300–365 nm: Curing of polymers and printer inks 300–400 nm: Solid-state lighting 350–370 nm: Bug zappers (flies are most attracted to light at 365 nm) ;Applications of UV Image Sensors;图 6 NGC 1851 球状星云紫外成像 图 7 紫外线人脸成像;Fig.10. Archeology;Primary properties a UV Image Sensor need to have;Existing Technologies;工作原理： An MCP essentially is a small thin disk of lead-oxide glass with numerous microscopic channels running parallel to each other from one face of the disk to the other. When an electric potential is applied between the two faces , the MCP becomes an image intensifier .The device can be considered to be a compact assemblage of photomultipliers since electrons striking the walls of a pore liberate additional electrons in a continuous dynode fashion to produce an avalanche .If the potential is sufficiently large, a photoelectron then gives rise to a saturated electron cloud with a total charge falling within a narrow range that can be easily counted electronically. Unfortunately MCPs have a significant surface-to-volume ratio which readily traps residual gas. Cleanliness and plate conditioning are thus important issues since MCPs are normally operated at potentials in excess of 1KeV which can cause destructive discharges.;ICCD（MCP-Intensified CCD） ;EBCCD;Z Stack;Back-Illuminated Ultraviolet Image Sensor inSilicon-on-Sapphire;Fig. 18. Pixel schematic. The Read signal connects/disconnects the photodio