f210GHz的超高速InPInGaAs单异质结晶体管.pdfVIP

第29卷第3期 半 导 体 学 报 V01．29 No．3 2008年3月 JOURNAL OF SEMICONDUCTORS Mar．，2008 Ultra High—Speed InP／InGaAs SHBTs with ft of 21 0GHz Cheng Weil，Jin Zhil”，Liu Xinyul，Yu Jinyon91，Xu Anhuai2，and Qi Mingz (1 Institute ofMicroelectronics，Chinese Academy ofSciences，Be(1ing 100029，China) (2 Shanghai Institute of Microsystem and Information Technology，Chinese Academy o，Sciences，Shanghai 200050，China) Abstract：Polyimide passivation and planarization process techniques for high speed InP／InGaAs single heterojunction bi- polar transistors(SHUTS)are developed．A maximum extrapolated，t of 210GHz is achieved for the SHBT with 1．4pm× 15扯m emitter area at ycB=1．1V and lc=33．5mA．This device is suitable for high speed and low power applications，such as ultra high speed mixed signal circuits and optoelectronic communication ICs。 Key words：InP；HBT；polyimide planarization EEACC．．2560J CLC number：TN385 Document code：A Article ID：0253-4177(2008)03-0414．04 I Introduction InP HBTs have inherent material advantages such as high electron saturation velocity and high e- lectron mobility，making them suitable for ultra high speed mixed signal circuits and optoelectronic com- munication ICsLl]．Although InP．based double hetero． iunction bipolar transistors(DHBTS)have higher breakdown voltage than single heteroiunction bipolar transistors(SHBTS)，InP．based DHBTs require a complicated epitaxy layer structure to overcome the current blocking effect at the base—collector iunc- tionE引．In this paper．an InP．based SHBT with a sim— pie epitaxy layer structure using polyimide passivation and planarization process techniques is reported．The device shows excellent DC and RF characteristics which is suitable for high speed and low power optoe- lectronic applications[副． We have successfully fabricated InP．based SHBTs with，t of 178GHz[41 using a base肛-bridge and an e· mitter air-bridge process technology．But the base弘· bridge and emitter air—bridge process technique has shortcomings that are difficult to overcome．First。