Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET.pdfVIP

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Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET.pdf

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Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET.pdf

Solid-State Electronics 129 (2017) 182–187 Contents lists available at ScienceDirect Solid-State Electronics journal homepage: /locate/sse Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET Arash Daghighi ?, Hadi Hematian Faculty of Engineering, Shahrekord University, Shahrekord, Iran article info Article history: Received 10 November 2015 Received in revised form 11 October 2016 Accepted 21 November 2016 Available online 22 November 2016 The review of this paper was arranged by Prof. S. Cristoloveanu Keywords: Breakdown voltage Body resistance Body contact Lateral BJT SOI LDMOSFET abstract In this paper, we report a diamond-shaped body contact (DSBC) for silicon-on-insulator (SOI) LDMOSFET. Several DSBC devices along with conventional body contact (CBC) structures are laid out using 0.35 lm SOI MOSFET foundry process. The DSBC device is designed using the same standard layers as in the CBC structure and the contact layout is adapted to process design rules. Experimental characterization of the CBC and DSBC devices in terms of off-state breakdown voltage (BVoff), on-state breakdown voltage (BVon), on-resistance (Ron) and device foot print showed 19% improvement in BVon compared DSBC device with that of the CBC structure. BVoff and Ron of both of the devices are identical. The device foot print is smaller in DSBC device by 11% compared with that of the CBC structure leading to enhanced ‘‘Onresistance ? Area” ?gure of merit where smaller high voltage SOI LDMOSEFT reduces the area and cost of power integrated circuits. In order to explain BVon improvement of DSBC structures, three-dimensional (3-D) device simulation is carried out to clarify the lateral BJT action and breakdown mechanism. It is demonstrated that the number of P+ diffusions in DSBC device can be increased to improve BVon without increasing ‘‘On-resistance ? Area”. The on-state breakdown voltage improvement and area ef?ciency of the diamond-shaped body contact proposes