Sn掺杂ZnO半导体纳米带的制备、结构和性能.pdfVIP

物理化学学报(Wuli Huaxue Xuebao) January Acta Phys. Chim. Sin., 2007, 23(1) ：55-58 55 [Article] Sn 掺杂ZnO 半导体纳米带的制备、结构和性能 红升1 齐俊杰1 黄运华1 廖庆亮1 张 跃1,2,* 1 2 ( 北京科技大学材料物理与化学系, 新金属材料国家重点实验室, 北京 100083) 摘要: 在无催化剂的条件下, 利用碳热还原反应气相沉积法制备出了高产率单晶Sn 掺杂ZnO 纳米带. XRD 和 TEM 研究表明纳米带为结晶完好的纤锌矿结构, 生长方向沿[0001], EDS 分析表明纳米带中Sn 元素含量约为 1.9 . 室温光致发光谱(PL)显示掺锡氧化锌纳米带存在强的绿光发射峰和较弱的紫外发射峰, 谱峰峰位中心分 别位于494.8 nm 和398.4 nm 处, 并对发光机制进行了分析. 这种掺杂纳米带有望作为理想的结构单元应用于纳 米尺度光电器件领域. ： 关键词 Sn 掺杂; 纳米带; ZnO; 光致发光; 生长机理 中图分类号: O649 Synthesis, Structure and Properties of Sn doped ZnO Nanobelts CHEN Hong鄄Sheng1 QI Jun鄄Jie1 HUANG Yun鄄Hua1 LIAO Qing鄄Liang1 ZHANG Yue1,2,* 1 2 ( Dep artment of Materials Physics and Chemistry; State Key Laboratory f or Advanced Metals and Materials, University of Science and Technology Beij ing, Beijing 100083, P. R. China) Abstract: Single crystalline Sn鄄doped ZnO nanobelts were successfully synthesized by the carbon thermal reduction deposition process without using any catalyst. XRD investigation confirmed that the products were the wurtzite structure of ZnO. SEM, EDS, and TEM analyses showed that the Sn鄄doped ZnO nanostructures contained a belt鄄like morphology with Sn doping content about 1.9%, and the growth direction of nanobelts was along the [0001] direction. A weak UV emission peak at around 398.4 nm