河南2025自考[大功率半导体科学]英语二高频题考点.docxVIP

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河南2025自考[大功率半导体科学]英语（二）高频题(考点)

一、选择题（每题1分，共10题）

1.WhatdoesVBEstandforinsemiconductordevices?

A.Base-EmitterVoltage

B.Collector-BaseVoltage

C.Gate-SourceVoltage

D.Drain-SourceVoltage

2.WhichofthefollowingisNOTatypicalapplicationofIGBTsinpowerelectronics?

A.Electricvehiclemotordrives

B.Renewableenergyinverters

C.Audioamplifiers

D.High-frequencypowersupplies

3.ThetermparasiticcapacitanceinMOSFETsrefersto:

A.Intentionallyaddedcapacitanceforfiltering

B.Unwantedcapacitanceduetolayoutdesign

C.Capacitancebetweenthegateandsource

D.Thecapacitanceofthepowersupply

4.WhatistheprimaryadvantageofSiCMOSFETsoverSiIGBTsinhigh-temperatureapplications?

A.Lowercost

B.Higherthermalconductivity

C.Simplerdrivingcircuitry

D.Betterreversebreakdowncapability

5.Inpowerelectronics,deadtimeisusedtoprevent:

A.Overvoltage

B.Short-circuit

C.Overcurrent

D.Frequencyinstability

6.Whichmaterialiscommonlyusedforthegatedielectricinhigh-powerMOSFETs?

A.Silicondioxide(SiO?)

B.Siliconnitride(Si?N?)

C.Galliumarsenide(GaAs)

D.Germaniumdioxide(GeO?)

7.Theturn-offlossinIGBTsismainlycausedby:

A.Forwardconductionresistance

B.Reverserecoverycharge

C.Gatechargecapacitance

D.Parasiticdiodeconduction

8.WhatisthetypicalfrequencyrangeforGaNHEMTsusedinpowerconverters?

A.1kHz

B.1kHz–100kHz

C.100kHz–1MHz

D.1MHz

9.ThebasewidthmodulationeffectinBJTtransistorsisalsoknownas:

A.Earlyeffect

B.Injectioneffect

C.Temperaturecoefficient

D.Saturationeffect

10.WhichofthefollowingisakeyconcernwhendesigningPCBlayoutsforhigh-powersemiconductors?

A.Signalintegrity

B.Groundbounce

C.Powersupplynoise

D.Alloftheabove

二、填空题（每题2分，共5题）

1.Thebreakdownvoltageofapowerdiodeisprimarilydeterminedbyits________anddopingconcentration.

Answer:Junctionarea

2.Inathree-phaseinverter,the_