贵州2025自考[大功率半导体科学]英语二考前冲刺练习题.docxVIP

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贵州2025自考[大功率半导体科学]英语（二）考前冲刺练习题

一、选择题（共20题，每题1分，计20分）

1.WhatdoesthetermGaNtypicallystandforinthefieldofpowersemiconductordevices?

A.GermaniumNitride

B.GalliumNitride

C.GoldNitride

D.GraphiteNitride

2.Whichofthefollowingisaprimaryadvantageofsiliconcarbide(SiC)overtraditionalsilicon(Si)inhigh-powerapplications?

A.Lowerthermalconductivity

B.Higherswitchingfrequency

C.Lowerbreakdownvoltage

D.Poorerradiationresistance

3.TheunifieddriftregionconceptinpowerMOSFETsrefersto:

A.Asinglep-njunction

B.Acombineddriftandchannelregion

C.Multiplestackeddriftlayers

D.Afullyinsulatedgatestructure

4.Whatisthetypicalsymbolusedtorepresenttheon-stateresistance(Rds(on))ofanIGBT?

A.Rth

B.Vce(sat)

C.Rds(on)

D.Vbe(on)

5.WhichmaterialiscommonlyusedasagatedielectricinmodernpowerMOSFETs?

A.Silicondioxide(SiO?)

B.Siliconnitride(Si?N?)

C.Al?O?

D.Alloftheabove

6.Inthecontextofpowerdevices,whatdoesSOAstandfor?

A.ShortOperatingAmplifier

B.ShortOpen-Angle

C.ShortOperationalAmplifier

D.ShortOxfordAngle

7.WhichofthefollowingisakeyfactorcontributingtothehighthermalconductivityofSiCdevices?

A.Lighteratomicweight

B.Strongercovalentbonds

C.Highercarriermobility

D.Presenceofmoredefects

8.TheparasiticthyristoreffectinpowerMOSFETsisprimarilycausedby:

A.Gateoxidebreakdown

B.Forward-biaseddrain-sourcejunction

C.Reverse-biaseddrain-sourcejunction

D.Externalcircuitinductance

9.Whatisthetypicalthresholdvoltage(Vth)rangeforenhancement-modeMOSFETs?

A.-1Vto+1V

B.0Vto+3V

C.-2Vto+2V

D.0Vto+5V

10.WhichofthefollowingisacommonissueinGaN-basedpowerdevices?

A.Highon-stateresistance

B.Lowthermalstability

C.Highbreakdownvoltage

D.Susceptibilitytoradiation

11.Thecriticalelectricfield(Ec)inSiCdevicesistypicallyhigherthaninsilicondueto:

A.Stronger