SiC肖特基势垒二极管的高温特性.pdf

IEICE Electronics Express, Vol.5, No.6, 198–203 High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena 1a) 2 1 Tsuyoshi Funaki , Tsunenobu Kimoto , and Takashi Hikihara 1 Kyoto University, Dept. of Electrical Eng. 2 Kyoto University, Dept. of Electronic Science and Eng., Graduate school of Engineering, Katsura, Kyoto, 615–8510, Japan a) funaki@kuee.kyoto-u.ac.jp Abstract: This paper experimentally studies the temperature depen- dencies of current–voltage (I–V) and capacitance–voltage (C–V) char- acteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450◦C. Their I–V characteristics show that SBDs indeed function as rectifiers at extremely high tem- peratures, but forward conduction and reverse blocking performance