硅碳氮薄膜的制备与发光性能的研究-材料学专业论文.docxVIP

摘要摘要 摘要 摘要 硅碳氮薄膜具有优异的光、电和机械性能，预计在微电子和光电子领域 有良好的应用前景。由于硅碳氮薄膜独特的发光性能和从可见光到紫外光范 围的可调节带隙，使它成为很有潜力的发光材料。 本文采用射频磁控溅射的方法，通过改变氮气的流量制各了一组不同成 分的硅碳氮薄膜，分别对薄膜进行不同条件下的退火。研究了薄膜的发光性 能(PL)，并进行了微观结构(TEM)，薄膜成分(EDS)，结晶相(XRD)， 表面价态(XPs)，表面键(FTIR)分析。 研究发现，在高温退火时，相比氩气和氮气，氢气是防止薄膜氧化的最 理想保护气氛。 Si2764C1577N496306 96薄膜在氢气保护下1200C退火，得到的薄膜能够观 察到紫外光和可见光。紫外光的发光原因是氧化硅中的缺陷导致的，可见光 的发光原因与13．SiC纳米晶的量子尺寸效应有关。 在低温低压氮气保护下退火后，Si34_7c26 5N250138薄膜也观察到了紫外 光和可见光，紫外光的发光原因也是氧化硅中的缺陷导致的，可见光是薄膜 中碳氮区域的碳原子的sp2杂化的结果。 另外，本论文还分析了在相同的退火温度下，氮气流量依次增加的硅碳 氮薄膜的发光性能的变化，发现溅射时氮气流量居于中间的样品发光强度高 于其他的四个样品，说明此参数溅射出来样品的成分更有利于薄膜发光。 关键词；硅碳氮光致发光溅射退火e-SiC相 ABSTRACTnin ABSTRACT nin silicon carbonitride(SiCN)films show an interesting combination of optical，electrical and mechanical properties，so it is promised that it will play a wide range of applications in the field of microelectronics and opto．electronics． SiCN thin films are proposed as candidates for luminescent application due to their extraordinary luminescent propeaies and adjustable band gaps varying from UV to visible light range． In this research，a series of SiCN films with different composition were deposited by radio-frequency reactive spuaedng by changing the flow rate ofN2， then annealed under different conditions．,The photoluminescent∞)properties were studied，and TEM，EDS，XRD，XPS，FTIR were adopted to investigate the structure and bond types in this research． It was found that using hydrogen as the protective gas is an efTective method in the course ofannealing compared with argon and nitrogen gas． Ultraviolet(UV)and visible light emit from Si27 64C1s 77N49 6306 96 film annealed越1200℃in hydrogen gas．The UV luminescence is attributed to defects in Si-O network,while the visible light is relate to the quantum confinement effect in crystal B-SiC phase． Si34 7C26 5N2sOl3 8 film shows ultraviolet and visible light emission after annealed砒low temperature in nitrogen gas with low pressure．The UV luminescence is also attributed to defects in Si一0 network,while the visible light is r